Liquid crystal display device, semiconductor device, and electronic appliance

• US 9,213,206 B2
• Filed: 04/03/2007
• Issued: 12/15/2015
• Est. Priority Date: 04/06/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): CHANG, CHARLES S
• Application Number:
  US11/695,898
• Publication Number:
  US 20070236640A1
• Time in Patent Office: 3,178 Days
• Field of Search: 349/47, 349140-141
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The liquid crystal display device includes an island-shaped first semiconductor film 102 which is formed over a base insulating film 101 and in which a source 102d, a channel forming region 102a, and a drain 102b are formed; a first electrode 102c which is formed of a material same as the first semiconductor film 102 to be the source 102d or the drain 102b and formed over the base insulating film 101; a second electrode 108 which is formed over the first electrode 102c and includes a first opening pattern 112; and a liquid crystal 110 which is provided over the second electrode 108.

Claims

1. A liquid crystal display device comprising:

a common electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the common electrode and the semiconductor layer;

a gate electrode over the first insulating film;

a pixel electrode over the first insulating film; and

a liquid crystal over the pixel electrode,

wherein the common electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

2. The liquid crystal display device according to claim 1, wherein orientation of the liquid crystal is controlled by an electric field between the common electrode and the pixel electrode.

3. An electronic appliance comprising the liquid crystal display device according to claim 1.

4. The liquid crystal display device according to claim 1, comprising a second insulating film over the gate electrode, wherein the pixel electrode is over the second insulating film.

5. The liquid crystal display device according to claim 1, wherein the pixel electrode comprises an opening.

6. A liquid crystal display device comprising:

a common electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the common electrode and the semiconductor layer;

a gate electrode over the first insulating film;

a pixel electrode over the first insulating film;

a liquid crystal over the pixel electrode;

an auxiliary wiring comprising a metal material over the first insulating film; and

a connection wiring over the auxiliary wiring,

wherein the common electrode is electrically connected to the auxiliary wiring through the connection wiring,

wherein the common electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

7. The liquid crystal display device according to claim 6, wherein orientation of the liquid crystal is controlled by an electric field between the common electrode and the pixel electrode.

8. An electronic appliance comprising the liquid crystal display device according to claim 6.

9. The liquid crystal display device according to claim 6, comprising a second insulating film over the gate electrode and the auxiliary wiring, wherein the pixel electrode and the connection wiring are over the second insulating film.

10. The liquid crystal display device according to claim 6, wherein the pixel electrode comprises an opening.

11. A liquid crystal display device comprising:

a first electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the first electrode and the semiconductor layer;

a gate electrode over the first insulating film;

a pixel electrode over the first insulating film; and

a liquid crystal over the pixel electrode;

wherein the first electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

12. The liquid crystal display device according to claim 11, wherein orientation of the liquid crystal is controlled by an electric field between the first electrode and the pixel electrode.

13. An electronic appliance comprising the liquid crystal display device according to claim 11.

14. The liquid crystal display device according to claim 11, comprising a second insulating film over the gate electrode, wherein the pixel electrode is over the second insulating film.

15. The liquid crystal display device according to claim 11, wherein the pixel electrode comprises an opening.

16. A liquid crystal display device comprising:

a first electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the first electrode and the semiconductor layer;

a gate electrode over the first insulating film;

a pixel electrode over the first insulating film;

a liquid crystal over the pixel electrode;

an auxiliary wiring comprising a metal material over the first insulating film; and

a connection wiring over the auxiliary wiring,

wherein the first electrode is electrically connected to the auxiliary wiring through the connection wiring,

wherein the first electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

17. The liquid crystal display device according to claim 16, wherein orientation of the liquid crystal is controlled by an electric field between the first electrode and the pixel electrode.

18. An electronic appliance comprising the liquid crystal display device according to claim 16.

19. The liquid crystal display device according to claim 16, comprising a second insulating film over the gate electrode and the auxiliary wiring, wherein the pixel electrode and the connection wiring are over the second insulating film.

20. The liquid crystal display device according to claim 16, wherein the pixel electrode comprises an opening.

21. A semiconductor device comprising:

a common electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the common electrode and the semiconductor layer;

a gate electrode over the first insulating film; and

a pixel electrode over the first insulating film,

wherein the common electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

22. An electronic appliance comprising the semiconductor device according to claim 21.

23. The semiconductor device according to claim 21, comprising a second insulating film over the gate electrode, wherein the pixel electrode is over the second insulating film.

24. The semiconductor device according to claim 21, wherein the pixel electrode comprises an opening.

25. A semiconductor device comprising:

a common electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the common electrode and the semiconductor layer;

a gate electrode over the first insulating film;

a pixel electrode over the first insulating film;

an auxiliary wiring comprising a metal material over the first insulating film; and

a connection wiring over the auxiliary wiring,

wherein the common electrode is electrically connected to the auxiliary wiring through the connection wiring,

wherein the common electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

26. An electronic appliance comprising the semiconductor device according to claim 25.

27. The semiconductor device according to claim 25, comprising a second insulating film over the gate electrode and the auxiliary wiring, wherein the pixel electrode and the connection wiring are over the second insulating film.

28. The semiconductor device according to claim 25, wherein the pixel electrode comprises an opening.

29. A semiconductor device comprising:

a first electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the first electrode and the semiconductor layer;

a gate electrode over the first insulating film; and

a pixel electrode over the first insulating film;

wherein the first electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

30. An electronic appliance comprising the semiconductor device according to claim 29.

31. The semiconductor device according to claim 29, comprising a second insulating film over the gate electrode, wherein the pixel electrode is over the second insulating film.

32. The semiconductor device according to claim 29, wherein the pixel electrode comprises an opening.

33. A semiconductor device comprising:

a first electrode over a substrate;

a semiconductor layer over the substrate;

a first insulating film over the first electrode;

a gate electrode over the first insulating film;

a pixel electrode over the first insulating film;

an auxiliary wiring comprising a metal material over the first insulating film; and

a connection wiring over the auxiliary wiring,

wherein the first electrode is electrically connected to the auxiliary wiring through the connection wiring,

wherein the first electrode and the semiconductor layer each comprises indium, gallium, and zinc, and

wherein the pixel electrode is electrically connected to the semiconductor layer.

34. An electronic appliance comprising the semiconductor device according to claim 33.

35. The semiconductor device according to claim 33, comprising a second insulating film over the gate electrode and the auxiliary wiring, wherein the pixel electrode and the connection wiring are over the second insulating film.

36. The semiconductor device according to claim 33, wherein the pixel electrode comprises an opening.