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Three-dimensional nonvolatile memory and method of fabrication

  • US 9,214,243 B2
  • Filed: 05/06/2014
  • Issued: 12/15/2015
  • Est. Priority Date: 11/16/1998
  • Status: Expired due to Fees
First Claim
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1. A three-dimensional memory comprising:

  • a first memory level comprising a first pillar-shaped memory cell comprising a first steering element coupled in series with and vertically stacked above or below a first non-volatile re-writable state change element; and

    a second memory level monolithically formed above the first memory level, the second memory level comprising a second pillar-shaped memory cell comprising a second steering element coupled in series with and vertically stacked above or below a second non-volatile re-writable state change element.

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