Very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices

• US 9,214,280 B2
• Filed: 09/19/2014
• Issued: 12/15/2015
• Est. Priority Date: 10/03/2008
• Status: Active Grant

• Current Assignee: Carver Scientific Inc.
• Original Assignee: Carver Scientific Inc.
• Inventors: Carver, David R., Carver, Robert G.
• Primary Examiner(s): McNally, Daniel
• Application Number:
  US14/490,873
• Publication Number:
  US 20150000090A1
• Time in Patent Office: 452 Days
• Field of Search: 156/272.2, 156/275.5, 427/79
• US Class Current: 1/1
• CPC Class Codes: H01G 13/00 Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
• CPC Class Codes: H01G 4/06 Solid dielectrics
• CPC Class Codes: H01G 4/14 Organic dielectrics
• CPC Class Codes: H01G 4/20 using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 H01G4/12 takes precedence
• CPC Class Codes: H01G 4/206 inorganic and synthetic material
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

Methods are disclosed for creating extremely high permittivity dielectric materials for use in capacitors and energy storage devices. High permittivity materials suspended in an organic non-conductive media matrix with enhanced properties and methods for making the same are disclosed. Organic polymers, shellac, silicone oil, and/or zein formulations are utilized to produce thin film low conductivity dielectric coatings. Transition metal salts as salt or oxide matrices are formed at low temperatures utilizing mild reducing agents.

Claims

1. A method for the creation of an energy storage device that is comprised of a layered dielectric on a substrate, said method comprising:

creating a first dielectric film, said first dielectric film comprising a film material selected from the group consisting of a first insulative film material and a first film material that exhibits a high permittivity;

creating a second dielectric film in contact with the first dielectric film, said second dielectric film comprising a film material selected from the group consisting of a second insulative film material and a second film material that exhibits a high permittivity, wherein the second dielectric film has a different composition than the first dielectric film, said first dielectric film and said second dielectric film comprising dielectric film layers;

arranging the dielectric film layers between an electrically conductive first electrode and an electrically conductive second electrode, said electrically conductive first electrode being in direct physical contact with the dielectric film layers and said electrically conductive second electrode being opposite the first electrode and in direct physical contact with the dielectric film layers; and

enhancing permittivity of the dielectric film layers by performing a permittivity enhancing treatment on at least a portion of the dielectric film layers, said permittivity enhancing treatment comprising a treatment selected from the group consisting of;

immersing the portion of the dielectric film layers in a direct current electric field,

immersing the portion of the dielectric film layers in a magnetic field by placing the electrically conductive first electrode, the electrically conductive second electrode and the dielectric film layers between magnetic north and south poles of a magnetic source such that the magnetic field is about perpendicular to an outer surface of the electrically conductive first electrode and an outer surface of the electrically conductive second electrode, and

introducing sodium borohydride into the portion of the dielectric film layers.

2. The method of claim 1, wherein the first dielectric film comprises a first film material that exhibits a high permittivity, the first film material comprising polymers selected from the group consisting of parylenes, shellac, zein, silicone oil polymers, polyurethane, acrylic acid, methacrylic acid, methacrylic amides, polyvinylsulfonic acid, cyanoacrylates, polyvinylalcohols, polylactic acid, polyethylene terephthalate, polyvinylsilane, and combinations thereof.

3. The method of claim 2, wherein the first film material that exhibits a high permittivity further comprises an inorganic salt.

4. The method of claim 1, wherein the second dielectric film comprises a second film material that exhibits a high permittivity, the second film material comprising polymers selected from the group consisting of parylenes, shellac, zein, silicone oil polymers, polyurethane, acrylic acid, methacrylic acid, methacrylic amides, polyvinylsulfonic acid, cyanoacrylates, polyvinylalcohols, polylactic acid, polyethylene terephthalate, polyvinylsilane, and combinations thereof.

5. The method of claim 4, wherein the second film material that exhibits a high permittivity further comprises an inorganic salt.

6. The method for the creation of an energy storage device according to claim 1, said permittivity enhancing treatment being performed on each of the first and second dielectric films during creation of the first and second dielectric layers.

7. The method for the creation of an energy storage device according to claim 1, said permittivity enhancing treatment being performed on each of the first and second dielectric films after arranging the dielectric film layers.

8. A method for the creation of an energy storage device that is comprised of a mixed dielectric, said method comprising:

creating a dielectric film, said dielectric film comprising a film material selected from the group consisting of a first insulative film material and a first film material that exhibits a high permittivity;

arranging the dielectric film between an electrically conductive first electrode and an electrically conductive second electrode, the electrically conductive first electrode being in direct physical contact with the dielectric film and the electrically conductive second electrode being opposite the electrically conductive first electrode and in direct physical contact with the dielectric film; and

enhancing permittivity of the dielectric film by performing a permittivity enhancing treatment on at least a portion of the dielectric film, said permittivity enhancing treatment comprising a treatment selected from the group consisting of;

immersing the portion of the dielectric film to be treated with the permittivity enhancing treatment in a direct current electric field,

immersing the portion of the dielectric film to be treated with the permittivity enhancing treatment in a magnetic field by placing the electrically conductive first and second electrodes and the dielectric film between magnetic north and south poles of a magnetic source such that the magnetic field between the north pole of the magnetic source and the south pole of the magnetic source is about perpendicular to an outer surface of the electrically conductive first electrode and an outer surface of the electrically conductive second electrode, and

introducing sodium borohydride into the portion of the dielectric film to be treated with the permittivity enhancing treatment.

9. The method for the creation of an energy storage device according to claim 8, said permittivity enhancing treatment being performed on the dielectric film during creation of the dielectric film.

10. A method for creating a thin coating of high permittivity dielectric material on a substrate, said method comprising:

providing a wetting agent solution by combining an organic polymer with a solvent and mixing the combined organic polymer with the solvent;

combining said wetting agent solution with a high permittivity dielectric material;

mixing said wetting agent solution with the high permittivity dielectric material to create a slurry;

spreading the slurry in a coating onto a first substrate;

placing a second substrate onto the slurry opposite the first substrate, the slurry being disposed between and in direct physical contact with the first substrate and with the second substrate thereby forming an assembly; and

(i) applying a direct current electric field by connection of a direct current voltage source across the first substrate, the slurry, and the second substrate, or (ii) placing the assembly between magnetic north and south poles of a magnetic source such that a magnetic field between the north pole of the magnetic source and the south pole of the magnetic source is about perpendicular to an outer surface of the first substrate and an outer surface of the second substrate.

11. The method of claim 10, further comprising:

placing said assembly between the magnetic north and south poles of the magnetic source, while applying the direct current electric field.

12. The method of claim 11, wherein the strength of said magnetic field is greater than 1 Gauss.

13. The method of claim 12, further comprising, while said assembly is placed between the magnetic north and south poles of the magnetic source and the direct current electric field is applied, setting the slurry by performing a step selected from the group consisting of curing the slurry and drying the slurry.

14. The method of claim 10, further comprising applying a direct current electric field by connection of a direct current voltage source across the first substrate, the slurry, and the second substrate, wherein the strength of said direct current electric field is greater than 100 V/cm.

15. The method of claim 14, further comprising, while applying the direct current electric field, setting the slurry by performing a step selected from the group consisting of curing the slurry and drying the slurry.

16. The of claim 10, further comprising placing the assembly between magnetic north and south poles of a magnetic source such that a magnetic field between the north pole of the magnetic source and the south pole of the magnetic source is about perpendicular to an outer surface of the first substrate and an outer surface of the second substrate, wherein the strength of said magnetic field is greater than 1 Gauss.

17. The method of claim 16, further comprising, while said assembly is placed between the magnetic north and south poles of the magnetic source, setting the slurry by performing a step selected from the group consisting of curing the slurry and drying the slurry.

18. The of claim 10, further comprising adding a reducing agent to said wetting agent solution.

19. The method of claim 18, said reducing agent comprising sodium borohydride.

20. The method of claim 10, further comprising:

dding a drying agent to the wetting agent solution; and

allowing the wetting agent solution to dry.

21. The method of claim 10, said organic polymer comprising a substance selected from the group consisting of parylene, shellac, zein and silicone oil.

22. The method of claim 10, further comprising adding an iron cation to said wetting agent solution.

23. A method for creating a thin coating of high permittivity dielectric material on a substrate, said method comprising:

providing a first solution comprising a polymer mixed with a cross-linking agent;

combining said first solution with a high permittivity dielectric material;

mixing said first solution with the high permittivity dielectric material to create a slurry;

spreading said slurry in a coating onto a first substrate;

applying a second substrate onto the coating of the slurry such that the slurry is disposed between and in direct physical contact with the first substrate and with the second substrate; and

applying a permittivity enhancing field across the first substrate, the slurry and the second substrate, the permittivity enhancing field comprising a field selected from the group consisting of

a direct current electric field generated by connecting a direct current voltage source across the first substrate, the slurry, and the second substrate, and

a magnetic field provided by placing the first substrate, the slurry, and the second substrate between magnetic north and south poles of a magnetic source such that the magnetic field between the north pole of the magnetic source and the south pole of the magnetic source is about perpendicular to an outer surface of the first substrate and an outer surface of the second substrate.

24. The method for creating a thin coating of high permittivity dielectric material on a substrate of claim 23, further comprising adding a reducing agent to said first solution.

25. The method for creating a thin coating of high permittivity dielectric material on a substrate of claim 24, said reducing agent comprising sodium borohydride.

26. The method for creating a thin coating of high permittivity dielectric material on a substrate of claim 23, the polymer comprising a substance selected from the group consisting of a parylene, shellac, zein, and silicone oil;

and said cross linking agent comprising an agent selected from the group consisting of divinylsilane, cyanoacrylate, and an epoxy.

27. The method for creating a thin coating of high permittivity dielectric material on a substrate of claim 23, further comprising adding an iron cation to the polymer.

28. The method for creating a thin coating of high permittivity dielectric material on a substrate according to claim 23, said method further comprising removing any particulate matter that is not dissolved into said first solution.