Oxide semiconductor film and semiconductor device
First Claim
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1. An oxide semiconductor film comprising:
- a first region and a second region,wherein the oxide semiconductor film comprises In, Ga and Zn,wherein a carbon concentration of the oxide semiconductor film is lower than 1×
1021 atoms/cm3,wherein the first region is over the second region,wherein the first region includes crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film, andwherein the second region includes nanocrystals.
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Abstract
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
231 Citations
16 Claims
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1. An oxide semiconductor film comprising:
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a first region and a second region, wherein the oxide semiconductor film comprises In, Ga and Zn, wherein a carbon concentration of the oxide semiconductor film is lower than 1×
1021 atoms/cm3,wherein the first region is over the second region, wherein the first region includes crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film, and wherein the second region includes nanocrystals. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a gate electrode layer; an oxide semiconductor layer; a gate insulating layer between the gate electrode layer and the oxide semiconductor layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; and an oxide insulating layer over the source electrode layer and the drain electrode layer and in contact with a first region of a top surface of the oxide semiconductor layer, wherein the oxide semiconductor layer comprises a channel formation region, wherein the oxide semiconductor layer comprises In, Ga and Zn, wherein a carbon concentration of the oxide semiconductor layer is lower than 1×
1021 atoms/cm3, andwherein at least a region of the oxide semiconductor layer includes crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer. - View Dependent Claims (5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a gate electrode layer; an oxide semiconductor layer comprising a first region and a second region; a gate insulating layer between the gate electrode layer and the oxide semiconductor layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; and an oxide insulating layer over the source electrode layer and the drain electrode layer and in contact with a first region of a top surface of the oxide semiconductor layer, wherein the oxide semiconductor layer comprises a channel formation region, wherein the oxide semiconductor layer comprises In, Ga and Zn, wherein a carbon concentration of the oxide semiconductor layer is lower than 1×
1021 atoms/cm3,wherein the first region includes crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer, and wherein the second region includes nanocrystals. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification