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Electroluminescent and photoluminescent multiband white light emitting diode

  • US 9,214,601 B1
  • Filed: 12/31/2014
  • Issued: 12/15/2015
  • Est. Priority Date: 12/31/2014
  • Status: Expired due to Fees
First Claim
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1. An electroluminescent and photoluminescent multiband white light emitting diode (LED), comprising:

  • an electroluminescent light emitting structure, comprising;

    an electroluminescent light emitting active layer, receiving a forward bias to emit a violet light having a wavelength between 390 nm and 450 nm and a full width at half maximum (FWHM) smaller than 25 nm; and

    a P-type semiconductor layer and a first N-type semiconductor layer disposed at two sides of the electroluminescent light emitting active layer, respectively;

    a first photoluminescent light emitting layer, spaced by the first N-type semiconductor layer to be disposed on the electroluminescent light emitting structure, adapted to absorb the violet light to emit a blue light;

    a second photoluminescent light emitting layer, spaced by a second N-type semiconductor layer to be disposed on the first photoluminescent light emitting layer, adapted to absorb the violet light and the blue light to emit a green light; and

    a red light emitting layer, spaced by a protection layer and a third N-type semiconductor layer to be disposed on the second photoluminescent light emitting layer, adapted to generate a red light, the red light, the green light, the blue light and the violet light being blended to form a white light.

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