Electroluminescent and photoluminescent multiband white light emitting diode
First Claim
1. An electroluminescent and photoluminescent multiband white light emitting diode (LED), comprising:
- an electroluminescent light emitting structure, comprising;
an electroluminescent light emitting active layer, receiving a forward bias to emit a violet light having a wavelength between 390 nm and 450 nm and a full width at half maximum (FWHM) smaller than 25 nm; and
a P-type semiconductor layer and a first N-type semiconductor layer disposed at two sides of the electroluminescent light emitting active layer, respectively;
a first photoluminescent light emitting layer, spaced by the first N-type semiconductor layer to be disposed on the electroluminescent light emitting structure, adapted to absorb the violet light to emit a blue light;
a second photoluminescent light emitting layer, spaced by a second N-type semiconductor layer to be disposed on the first photoluminescent light emitting layer, adapted to absorb the violet light and the blue light to emit a green light; and
a red light emitting layer, spaced by a protection layer and a third N-type semiconductor layer to be disposed on the second photoluminescent light emitting layer, adapted to generate a red light, the red light, the green light, the blue light and the violet light being blended to form a white light.
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Accused Products
Abstract
An electroluminescent and photoluminescent white light emitting diode (LED) includes an electroluminescent light emitting structure, a first photoluminescent light emitting layer, a second photoluminescent light emitting layer and a red light emitting layer. The electroluminescent light emitting structure emits a violet light having a wavelength between 395 nm and 450 nm and an FWHM smaller than 25 nm. The first photoluminescent light emitting layer and the second photoluminescent light emitting layer are sequentially disposed on the electroluminescent light emitting structure. The first photoluminescent light emitting layer absorbs the violet light to generate a blue light. The second photoluminescent light emitting layer absorbs the violet light and the blue light to generate a green light. The red light emitting layer generates a red light. Accordingly, the violet light, the blue light, the green light and the red light are blended to form a white light having a high color rendering index.
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Citations
9 Claims
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1. An electroluminescent and photoluminescent multiband white light emitting diode (LED), comprising:
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an electroluminescent light emitting structure, comprising; an electroluminescent light emitting active layer, receiving a forward bias to emit a violet light having a wavelength between 390 nm and 450 nm and a full width at half maximum (FWHM) smaller than 25 nm; and a P-type semiconductor layer and a first N-type semiconductor layer disposed at two sides of the electroluminescent light emitting active layer, respectively; a first photoluminescent light emitting layer, spaced by the first N-type semiconductor layer to be disposed on the electroluminescent light emitting structure, adapted to absorb the violet light to emit a blue light; a second photoluminescent light emitting layer, spaced by a second N-type semiconductor layer to be disposed on the first photoluminescent light emitting layer, adapted to absorb the violet light and the blue light to emit a green light; and a red light emitting layer, spaced by a protection layer and a third N-type semiconductor layer to be disposed on the second photoluminescent light emitting layer, adapted to generate a red light, the red light, the green light, the blue light and the violet light being blended to form a white light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification