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Triple cascode power amplifier

  • US 9,214,898 B2
  • Filed: 01/17/2014
  • Issued: 12/15/2015
  • Est. Priority Date: 01/31/2013
  • Status: Active Grant
First Claim
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1. A triple cascode power amplifier, comprising:

  • a first-stage transistor pair comprising two first-stage transistors that respectively receive two dynamic bias voltages with opposite polarities;

    a second-stage transistor pair coupled with the first-stage transistor pair to four a first node, the second-stage transistor pair comprising two second-stage transistors coupled with each other to form a second node; and

    a third-stage transistor pair coupled with the second-stage transistor pair, the third-stage transistor pair comprising two third-stage transistors for outputting a differential signal;

    wherein the first-stage transistor pair and the second-stage transistor pair are low voltage components while the third-stage transistor pair is a high voltage component; and

    wherein the power amplifier transforms the differential signal into a single-ended signal for output; and

    a control circuit for generating a control signal at the second node to control a voltage at the first node with respect to a ground within a predetermined range;

    wherein the control circuit comprises;

    an operational amplifier, a first input terminal of which receives a first voltage and an output terminal of which generates the control signal;

    a first current source for supplying a current;

    a second transistor, a gate of which is coupled with the output terminal of the operational amplifier to form a third node, a drain of which is coupled with the first current source and a source of which is coupled with a second input terminal of the operational amplifier to form a fourth node; and

    a first transistor, a drain of which is coupled with the fourth node and a source of which is grounded;

    wherein the second node is coupled to the third node;

    wherein amplification coefficients of the first transistor and the first-stage transistors are proportional and amplification coefficients of the second transistor and the second-stage transistors are proportional; and

    wherein a voltage at the first node varies according to a voltage at the fourth node.

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