Epitaxial formation support structures and associated methods

• US 9,216,519 B2
• Filed: 08/06/2013
• Issued: 12/22/2015
• Est. Priority Date: 12/07/2009
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sheen, Calvin Wade
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): Parker, John M
• Application Number:
  US13/960,500
• Publication Number:
  US 20130316038A1
• Time in Patent Office: 868 Days
• Field of Search: 438/46, 438/455, 438/458, 257/E21.497
• US Class Current: 1/1
• CPC Class Codes: B28B 1/16 for producing layered articles coating B28B11/04
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages

Abstract

Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat.

Claims

1. An apparatus for forming epitaxial formation support substrates, comprising:

a first reference plate having a first surface and a second surface opposite the first surface, the first surface including a first formation portion; and

a second reference plate having a first surface and a second surface opposite the first surface, the second surface including a second formation portion, wherein the first and second formation portions of the first and second reference plates face each other, the first formation portion being configured to define a first surface of an uncured support substrate during a firing process and the second formation portion being configured to define a second surface of the uncured support substrate, wherein the uncured support substrate has a coefficient of thermal expansion (CTE) substantially similar to that of N-type gallium nitride (GaN).

2. The apparatus of claim 1 wherein the first and second reference plates are two of a plurality of reference plates, and wherein individual reference plates are spaced on one another to form a stack.

3. The apparatus of claim 2 wherein the reference plates increase in mass as the reference plates are positioned higher in the stack.

4. The apparatus of claim 1, further comprising a spacer between the first surface of the first reference plate and the second surface of the second reference plate, the spacer having a height less than a height of the uncured support substrate.

5. The apparatus of claim 4 wherein the spacer is one of a plurality of spacers at a peripheral portion of the first surface of the first reference plate.

6. The apparatus of claim 4 wherein the spacer includes a protrusion extending from a peripheral portion of the first surface of the first reference plate.

7. The apparatus of claim 1 wherein the reference plates comprise aluminum oxide (Al₂O₃).

8. The apparatus of claim 1 wherein the first and second formation portions of the first and second reference plates include a removal agent configured prevent uncured support substrates from adhering to the first and second reference plates after firing.

9. The apparatus of claim 1 wherein at least one of the first and second formation portions is substantially uniformly flat.

10. An apparatus for forming epitaxial formation support substrates, comprising:

a first reference plate having a surface with a first formation portion; and

a second reference plate having a surface with a second formation portion, wherein the first and second formation portions of the first and second reference plates face each other and are configured to contact opposing sides of a support substrate having a coefficient of thermal expansion (CTE) substantially similar to that of N-type gallium nitride (GaN), and wherein, during a firing process, the first formation portion being configured to define a substantially planar surface of the support substrate that is at least substantially uniformly flat.

11. The apparatus of claim 10 wherein the first formation portion is at least substantially uniformly flat.

12. The apparatus of claim 10 wherein the first and second reference plates are two of a plurality of reference plates, and wherein the plurality of reference plates are configured to be stacked on each other with at least one support substrate between each pair of reference plates.

13. An apparatus for forming epitaxial formation support substrates, comprising:

a reference plate having a surface with a formation portion; and

an uncured support substrate having a first side in contact with the formation portion of the reference plate, wherein the uncured support substrate has a coefficient of thermal expansion (CTE) substantially similar to N-type gallium nitride (GaN), wherein the uncured support substrate and the reference plate are configured to be fired together to sinter the uncured support substrate, and wherein the side of the sintered support substrate is configured to have a planar surface that is at least substantially uniformly flat.

14. The apparatus of claim 13 wherein the uncured support substrate includes a polycrystalline ceramic.

15. The apparatus of claim 14 wherein the polycrystalline ceramic comprises at least one of Si₃N₄, TiN, HfN, AlN, SiO₂, AL₂O₃, AlON, TiC, ZrC, HfC, SiC, and Y₂O₃.

16. The apparatus of claim 13 wherein the formation portion of the reference plate is at least substantially uniformly flat.

17. The apparatus of claim 13 wherein the reference plate is a first reference plate, and wherein the apparatus further comprises a second reference plate having a surface with a formation portion, wherein the formation portions of the first and second reference plates face each other and are configured to contact opposing sides of the uncured support substrate, the formation portion of the first reference plate is configured to define a first surface of the support substrate and the formation portion of the second reference plate is configured to define a second surface of the support substrate.