Methods for forming layers on semiconductor substrates
First Claim
1. A method of forming a layer on a substrate, comprising:
- providing a substrate to a substrate support in a process chamber, the process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust;
providing a process gas from the gas port in a first direction such that the process gas flows across a surface of the substrate from the gas port to the exhaust;
providing a plasma from the plasma port to the substrate in a second direction that is different from the first direction to form a layer, wherein the plasma is provided such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and
rotating the substrate in a first direction while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.
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Abstract
Methods of forming a layer on a substrate may include providing a substrate to a process chamber, the process chamber having a gas port, an exhaust, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across the substrate; providing a plasma such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.
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Citations
20 Claims
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1. A method of forming a layer on a substrate, comprising:
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providing a substrate to a substrate support in a process chamber, the process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across a surface of the substrate from the gas port to the exhaust; providing a plasma from the plasma port to the substrate in a second direction that is different from the first direction to form a layer, wherein the plasma is provided such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate in a first direction while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a layer on a substrate, comprising:
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providing a substrate to a substrate support in a process chamber, the process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across a surface of the substrate from the gas port to the exhaust, wherein the process gas comprises a nitrogen containing gas; providing a plasma formed from a nitrogen containing gas from the plasma port to the substrate in a second direction that is different from the first direction to form a nitrogen containing layer, wherein the plasma is provided such that a flow of the plasma interacts with a flow of the process gas at an angle of about 56 to about 71 degrees; and rotating the substrate in a first direction while providing the process gas and the plasma, wherein a thickness profile of the nitrogen containing layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.
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13. A computer readable medium having instructions stored thereon that, when executed, cause a method of forming a layer on a substrate disposed on a substrate support in a process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust to be performed, the method comprising:
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providing a process gas from the gas port in a first direction such that the process gas flows across a surface of the substrate from the gas port to the exhaust; providing a plasma from the plasma port to the substrate in a second direction that is different from the first direction to form a layer, wherein the plasma is provided such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate in a first direction while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification