Stabilization structure including shear release posts

• US 9,217,541 B2
• Filed: 05/14/2013
• Issued: 12/22/2015
• Est. Priority Date: 05/14/2013
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: LuxVue Techonology Corporation (Apple Inc.)
• Inventors: Bathurst, Stephen, Hu, Hsin-Hua, Bibl, Andreas
• Primary Examiner(s): Clark, S. V.
• Application Number:
  US13/894,332
• Publication Number:
  US 20140340900A1
• Time in Patent Office: 952 Days
• Field of Search: 257/723, 257/724, 257/513, 257/622, 257/88
• US Class Current: 1/1
• CPC Class Codes: B81C 99/002 Apparatus for assembling MEMS, e.g. micromanipulators micromanipulators per se B25J7/00
• CPC Class Codes: H01L 21/7806 involving the separation of the active layers from a substrate
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/03002 for supporting the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/95001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/95136 involving guiding structures, e.g. shape matching, spacers or supporting members
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/10272 Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/10329 Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1033 Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/10331 Gallium phosphide [GaP]
• CPC Class Codes: H01L 2924/10336 Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/10342 Gallium arsenide phosphide [GaAsP]
• CPC Class Codes: H01L 2924/10346 : Indium gallium nitride [InGaN]
• CPC Class Codes: H01L 2924/10349 : Aluminium gallium indium phosphide [AlGaInP]
• CPC Class Codes: H01L 2924/10375 : Zinc selenide [ZnSe]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1431 : Logic devices
• CPC Class Codes: H01L 2924/1434 : Memory
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 33/0095 : Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: Y10T 29/49002 : Electrical device making

Abstract

A stabilization structure includes a stabilization layer on a carrier substrate. The stabilization layer includes an array of staging cavities. An array of micro devices are within the array of staging cavities. Each micro device is laterally attached to a shear release post laterally extending from a sidewall of a staging cavity. A pressure is applied to the array of micro devices from the array of transfer heads to shear the array of micro devices off the shear release posts. The sheared off micro devices are picked up from the carrier substrate using the array of transfer heads.

Claims

1. A stabilization structure comprising:

a carrier substrate;

a stabilization layer on the carrier substrate, the stabilization layer including an array of staging cavities; and

an array of micro devices within the array of staging cavities, wherein each micro device is laterally attached to a shear release post laterally extending from a sidewall of a staging cavity.

2. The structure of claim 1, wherein each micro device is secured above a bottom surface of the staging cavity of the stabilization layer.

3. The structure of claim 1, wherein the stabilization layer is formed of a thermoset material.

4. The structure of claim 3, wherein the thermoset material includes benzocyclobutene (BCB).

5. The structure of claim 1, wherein each micro device is embedded in a sacrificial release layer.

6. The structure of claim 5, wherein the sacrificial release layer comprises an oxide material.

7. The structure of claim 1, wherein each micro device is a micro chip.

8. The structure of claim 1, wherein each micro device is a micro light emitting diode (LED) device.

9. The structure of claim 1, wherein each micro device has a maximum width of 1 μ

m-100 μ

m.

10. The structure of claim 9, wherein each micro device is attached to a shear release post with an attachment area having a height that is less than a height of the micro device.

11. The structure of claim 10, wherein the height of the attachment area of the micro device is up to 50% of the height of the micro device.

12. The structure of claim 5, wherein the micro devices are thicker than the sacrificial release layer.

13. The structure of claim 1, wherein the shear release post is formed axially between adjacent micro devices.

14. The structure of claim 1, wherein the shear release post is formed diagonally between adjacent micro devices.