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Semiconductor device with vertical transistor channels and a compensation structure

  • US 9,219,149 B2
  • Filed: 07/05/2013
  • Issued: 12/22/2015
  • Est. Priority Date: 07/05/2013
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • transistor cells arranged at a first pitch and having double-gated and fully depletable vertical channels perpendicular to a first surface of a semiconductor portion;

    a buried compensation structure between the transistor cells and a second surface of the semiconductor portion parallel to the first surface, the compensation structure comprising first areas and second areas alternatingly arranged along a lateral direction parallel to the first surface wherein the first areas are arranged at a second pitch that differs from the first pitch, wherein at least one of;

    a material composition, and a conductivity type, of the first area, is different from the second area; and

    a contiguous impurity layer of a first conductivity type separating the transistor cells and the compensation structure.

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