Method for forming oxide semiconductor film and method for manufacturing semiconductor device

• US 9,219,159 B2
• Filed: 03/16/2012
• Issued: 12/22/2015
• Est. Priority Date: 03/25/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Imoto, Yuki, Maruyama, Tetsunori, Takayama, Toru
• Primary Examiner(s): Niesz, Jamie C
• Assistant Examiner(s): Hillman, Damian A
• Application Number:
  US13/422,241
• Publication Number:
  US 20120244659A1
• Time in Patent Office: 1,376 Days
• Field of Search: 438/104
• US Class Current: 1/1
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. In addition, a method for manufacturing a semiconductor device having favorable electric characteristics, with use of the oxide semiconductor film is provided. A method for forming an oxide semiconductor film including the steps of forming an oxide semiconductor film, forming a hydrogen permeable film over and in contact with the oxide semiconductor film, forming a hydrogen capture film over and in contact with the hydrogen permeable film, and releasing hydrogen from the oxide semiconductor film by performing heat treatment. Further, in a method for manufacturing a semiconductor device, the method for forming an oxide semiconductor film is used.

Claims

1. A method for forming a semiconductor device comprising the steps of:

forming an oxide semiconductor film which includes a region to become a channel formation region;

forming a hydrogen permeable film over the oxide semiconductor film, the hydrogen permeable film comprising silicon and oxygen;

forming a hydrogen capture film over the hydrogen permeable film, the hydrogen capture film comprising indium, oxygen, and nitrogen;

transferring hydrogen from the oxide semiconductor film to the hydrogen capture film by performing heat treatment; and

removing the hydrogen capture film and the hydrogen permeable film,

wherein the hydrogen permeable film is an insulating film.

2. The method for forming a semiconductor device according to claim 1,

wherein the hydrogen permeable film and the hydrogen capture film are removed after the heat treatment.

3. The method for forming a semiconductor device according to claim 1,

wherein the hydrogen capture film comprises a metal element included in the oxide semiconductor film, and

wherein the hydrogen permeable film does not include the metal element.

4. The method for forming a semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O film,

wherein the hydrogen capture film comprises an In−

Ga—

Zn—

O—

N film.

5. The method for forming a semiconductor device according to claim 1,

wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

6. The method for forming a semiconductor device according to claim 1,

wherein a hydrogen concentration in the hydrogen capture film increases after the heat treatment, and

wherein a hydrogen concentration in the oxide semiconductor film is lower than or equal to 5×

10¹⁸ cm<sup>−

3</sup> after the heat treatment.

14. The method for forming a semiconductor device according to claim 1,

wherein the hydrogen capture film comprises indium nitride and one or more materials of indium oxide, gallium oxide, zinc oxide, tin oxide, aluminum oxide.

17. The method for forming a semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises indium and zinc.

20. The method for forming a semiconductor device according to claim 1,

wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

7. A method for forming a semiconductor device comprising the steps of:

forming an oxide semiconductor film, which includes a region to become a channel formation region;

forming a hydrogen permeable film over the oxide semiconductor film, the hydrogen permeable film comprising silicon and oxygen;

forming a hydrogen capture film over the hydrogen permeable film, the hydrogen capture film comprising indium, oxygen, and nitrogen;

transferring hydrogen from the oxide semiconductor film to the hydrogen capture film and supplying oxygen to the oxide semiconductor film from the hydrogen permeable film by performing heat treatment; and

removing the hydrogen capture film and the hydrogen permeable film,

wherein the hydrogen permeable film is an insulating film.

8. The method for forming a semiconductor device according to claim 7,

wherein the hydrogen permeable film and the hydrogen capture film are removed after the heat treatment.

9. The method for forming a semiconductor device according to claim 7,

wherein the hydrogen capture film comprises a metal element included in the oxide semiconductor film, and

wherein the hydrogen permeable film does not include the metal element.

10. The method for forming a semiconductor device according to claim 7,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O film,

wherein the hydrogen capture film comprises an In—

Ga—

Zn—

O—

N film.

11. The method for forming a semiconductor device according to claim 7,

wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

12. The method for forming a semiconductor device according to claim 7,

wherein a hydrogen concentration in the hydrogen capture film increases after the heat treatment, and

wherein a hydrogen concentration in the oxide semiconductor film is lower than or equal to 5×

10¹⁸ cm<sup>−

3</sup> after the heat treatment.

15. The method for forming a semiconductor device according to claim 7,

wherein the hydrogen capture film comprises indium nitride and one or more materials of indium oxide, gallium oxide, zinc oxide, tin oxide, aluminum oxide.

18. The method for forming a semiconductor device according to claim 7,

wherein the oxide semiconductor film comprises indium and zinc.

21. The method for forming a semiconductor device according to claim 7,

wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

13. A method for forming a semiconductor device comprising the steps of:

forming a first oxide semiconductor film;

forming a hydrogen permeable film over the first oxide semiconductor film, the hydrogen permeable film comprising silicon and oxygen;

forming a hydrogen capture film over the hydrogen permeable film, the hydrogen capture film comprising indium, oxygen, and nitrogen;

transferring hydrogen from the first oxide semiconductor film to the hydrogen capture film by performing heat treatment;

removing the hydrogen capture film and the hydrogen permeable film; and

patterning the first oxide semiconductor film to form a second oxide semiconductor film which includes a region to become a channel formation region.

16. The method for forming a semiconductor device according to claim 13,

wherein the hydrogen capture film comprises indium nitride and one or more materials of indium oxide, gallium oxide, zinc oxide, tin oxide, aluminum oxide.

19. The method for forming a semiconductor device according to claim 13,

wherein the first oxide semiconductor film comprises indium and zinc.