Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor layer over an insulating surface;
a first conductive layer and a second conductive layer over the oxide semiconductor layer;
a gate insulating layer over the first conductive layer and the second conductive layer; and
a gate electrode over the gate insulating layer,wherein the gate electrode overlaps with a portion of the first conductive layer and a portion of the second conductive layer with the gate insulating layer therebetween, andwherein the oxide semiconductor layer comprises a nanocrystal with a size greater than or equal to 1 nm and smaller than or equal to 20 nm.
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Abstract
A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.
155 Citations
16 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer over an insulating surface; a first conductive layer and a second conductive layer over the oxide semiconductor layer; a gate insulating layer over the first conductive layer and the second conductive layer; and a gate electrode over the gate insulating layer, wherein the gate electrode overlaps with a portion of the first conductive layer and a portion of the second conductive layer with the gate insulating layer therebetween, and wherein the oxide semiconductor layer comprises a nanocrystal with a size greater than or equal to 1 nm and smaller than or equal to 20 nm. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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an oxide semiconductor layer over an insulating surface; a first conductive layer and a second conductive layer over the oxide semiconductor layer; a gate insulating layer over the first conductive layer and the second conductive layer; and a gate electrode over the gate insulating layer, wherein the gate electrode overlaps with a portion of the first conductive layer and a portion of the second conductive layer with the gate insulating layer therebetween, and wherein the oxide semiconductor layer comprises a nanocrystal with a size greater than or equal to 1 nm and smaller than or equal to 20 nm, wherein a ratio of the nanocrystal in the oxide semiconductor layer is larger than or equal to 90%. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising:
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an oxide semiconductor layer over an insulating surface; a first conductive layer and a second conductive layer over the oxide semiconductor layer; a third conductive layer over the first conductive layer; a fourth conductive layer over the second conductive layer; a gate insulating layer over the third conductive layer and the fourth conductive layer; and a gate electrode over the gate insulating layer, wherein the gate electrode overlaps with a portion of the third conductive layer and a portion of the fourth conductive layer with the gate insulating layer therebetween, and wherein the oxide semiconductor layer comprises a nanocrystal with a size greater than or equal to 1 nm and smaller than or equal to 20 nm. - View Dependent Claims (10, 11, 12)
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13. A semiconductor device comprising:
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an oxide semiconductor layer over an insulating surface; a first conductive layer and a second conductive layer over the oxide semiconductor layer; a third conductive layer over the first conductive layer; a fourth conductive layer over the second conductive layer; a gate insulating layer over the third conductive layer and the fourth conductive layer; and a gate electrode over the gate insulating layer, wherein the gate electrode overlaps with a portion of the third conductive layer and a portion of the fourth conductive layer with the gate insulating layer therebetween, and wherein the oxide semiconductor layer comprises a nanocrystal with a size greater than or equal to 1 nm and smaller than or equal to 20 nm, wherein a ratio of the nanocrystal in the oxide semiconductor layer is larger than or equal to 90%. - View Dependent Claims (14, 15, 16)
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Specification