Display device and manufacturing method thereof

• US 9,219,163 B2
• Filed: 03/19/2015
• Issued: 12/22/2015
• Est. Priority Date: 11/11/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun
• Primary Examiner(s): CHIEN, LUCY P
• Application Number:
  US14/662,440
• Publication Number:
  US 20150255613A1
• Time in Patent Office: 278 Days
• Field of Search: 349/43, 349/141
• US Class Current: 1/1
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The display device includes a gate electrode, a gate insulating film provided over the gate electrode, a semiconductor film provided over the gate insulating film to overlap with the gate electrode, an island-shaped first insulating film provided over the semiconductor film to overlap with the gate electrode, a first conductive film provided over the semiconductor film, a pair of second conductive films which is provided over the semiconductor film and between which the first insulating film is sandwiched, and a second insulating film provided over the first insulating film, the first conductive film, and the pair of second conductive films. In the second insulating film and the semiconductor film, an opening portion which is positioned between the first conductive film and the one or the other of the pair of second conductive films is provided.

Claims

1. A semiconductor device comprising:

a first insulating film and a second insulating film over a substrate;

a first semiconductor film over the first insulating film;

a second semiconductor film over the second insulating film;

a third insulating film over the first semiconductor film;

a first conductive film and a second conductive film over the first semiconductor film and the third insulating film, wherein the third insulating film is interposed between the first conductive film and the second conductive film;

a fourth insulating film over the first semiconductor film, the first conductive film, and the second conductive film;

a third conductive film over the second semiconductor film;

a fifth insulating film over the second semiconductor film and the third conductive film; and

an opening portion between the first insulating film and the second insulating film, between the first semiconductor film and the second semiconductor film, and between the fourth insulating film and the fifth insulating film, wherein the opening portion is provided between the third conductive film and at least one of the first conductive film and the second conductive film.

2. The semiconductor device according to claim 1, comprising a fourth conductive film over the substrate, wherein the first semiconductor film is provided over the fourth conductive film with the first insulating film interposed therebetween.

3. The semiconductor device according to claim 1, comprising a fourth conductive film over the fourth insulating film, wherein the fourth conductive film is in contact with one of the first conductive film and the second conductive film.

4. The semiconductor device according to claim 1, wherein each of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.

5. The semiconductor device according to claim 4, wherein the oxide semiconductor film comprises indium and zinc.

6. The semiconductor device according to claim 5, wherein the oxide semiconductor film comprises gallium.

7. The semiconductor device according to claim 1,

wherein the first conductive film and the second conductive film are on and in contact with the first semiconductor film, and

wherein the third conductive film is on and in contact with the second semiconductor film.

8. The semiconductor device according to claim 1,

wherein the first semiconductor film is on and in contact with the first insulating film, and

wherein the second semiconductor film is on and in contact with the second insulating film.

9. A semiconductor device comprising:

a first insulating film over a substrate;

a semiconductor film over the first insulating film;

a second insulating film over the semiconductor film;

a first conductive film and a second conductive film over the semiconductor film and the second insulating film, wherein the second insulating film is interposed between the first conductive film and the second conductive film;

a third conductive film over the semiconductor film;

a third insulating film over the semiconductor film, the first conductive film, the second conductive film, and the third conductive film; and

an opening portion in the first insulating film, the semiconductor film, and the third insulating film, wherein the opening portion is provided between the third conductive film and at least one of the first conductive film and the second conductive film.

10. The semiconductor device according to claim 9, wherein the opening portion is surrounded by the semiconductor film.

11. The semiconductor device according to claim 9, comprising a fourth conductive film over the substrate, wherein the semiconductor film is provided over the fourth conductive film with the first insulating film interposed therebetween.

12. The semiconductor device according to claim 9, comprising a fourth conductive film over the third insulating film, wherein the fourth conductive film is in contact with one of the first conductive film and the second conductive film.

13. The semiconductor device according to claim 9, wherein the semiconductor film is an oxide semiconductor film.

14. The semiconductor device according to claim 13, wherein the oxide semiconductor film comprises indium and zinc.

15. The semiconductor device according to claim 14, wherein the oxide semiconductor film comprises gallium.

16. The semiconductor device according to claim 9, wherein the first conductive film, the second conductive film, and the third conductive film are on and in contact with the semiconductor film.

17. The semiconductor device according to claim 9, wherein the semiconductor film is on and in contact with the first insulating film.

18. A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a first insulating film over a substrate;

forming a semiconductor film over the first insulating film;

forming a second insulating film over the semiconductor film;

forming a first conductive film and a second conductive film over the semiconductor film and the second insulating film and forming a third conductive film over the semiconductor film;

forming a third insulating film over the semiconductor film, the first conductive film, the second conductive film, and the third conductive film; and

forming an opening portion between the third conductive film and at least one of the first conductive film and the second conductive film by removing parts of the third insulating film, the semiconductor film, and the first insulating film.

19. The method according to claim 18, wherein the opening portion is surrounded by the semiconductor film.

20. The method according to claim 18, comprising the step of forming a fourth conductive film over the substrate, wherein the semiconductor film is formed over the fourth conductive film with the first insulating film interposed therebetween.

21. The method according to claim 18, comprising the step of forming a fourth conductive film over the third insulating film, wherein the fourth conductive film is in contact with one of the first conductive film and the second conductive film.

22. The method according to claim 18, wherein the semiconductor film is an oxide semiconductor film.

23. The method according to claim 22, wherein the oxide semiconductor film comprises indium and zinc.

24. The method according to claim 23, wherein the oxide semiconductor film comprises gallium.

25. The method according to claim 18, wherein the first conductive film, the second conductive film, and the third conductive film are on and in contact with the semiconductor film.

26. The method according to claim 18, wherein the semiconductor film is on and in contact with the first insulating film.