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Graded electron blocking layer

  • US 9,219,189 B2
  • Filed: 09/14/2012
  • Issued: 12/22/2015
  • Est. Priority Date: 09/14/2012
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a p-side heterostructure;

    an n-side heterostructure;

    an active region disposed between the p-side heterostructure and the n-side heterostructure and configured to emit light;

    an electron blocking layer (EBL) disposed on a growth surface and arranged between the p-side heterostructure and the active region, the EBL having a thickness and comprising an aluminum containing group-III-nitride alloy; and

    a p-side superlattice disposed on the electron blocking layer,wherein an aluminum composition of the EBL changes as a function of distance along a growth direction-from the active region towards the p-side heterostructure over a majority of the thickness of the EBL, and wherein the change in the aluminum composition is dependent on growth surface orientation, wherein the aluminum composition in the EBL decreases along the growth direction for a growth surface orientation having crystallographic indices (hk( h+k)m) with m greater than zero or the aluminum composition in the EBL increases along the growth direction for a growth surface orientation having crystallographic indices (hk( h+k)m) with m less than zero.

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