Large emission area light-emitting devices

• US 9,219,200 B2
• Filed: 02/21/2013
• Issued: 12/22/2015
• Est. Priority Date: 04/15/2003
• Status: Active Grant

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Erchak, Alexei A., Lidorikis, Elefterios, Luo, Chiyan
• Primary Examiner(s): Williams, Joseph L
• Application Number:
  US13/773,246
• Publication Number:
  US 20130320297A1
• Time in Patent Office: 1,034 Days
• Field of Search: 313498-512, 313110-112, 257/10, 372 43- 49
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

Light-emitting devices, and related components, systems and methods are disclosed.

Claims

1. A light-emitting device, comprising:

a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially.

2. The light-emitting device of claim 1, wherein the multi-layer stack further comprises a layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material.

3. The light-emitting device of claim 1, wherein the at least one gallium nitride semiconductor material comprises GaN.

4. The light-emitting device of claim 1, wherein the at least one gallium nitride semiconductor material comprises AlGaN.

5. The light-emitting device of claim 1, further comprising electrical contacts configured to inject current into the light-emitting device.

6. The light-emitting device of claim 5, wherein the electrical contacts are configured to vertically inject electrical current into the light-emitting device.

7. The light-emitting device of claim 1, wherein the first layer comprises a semiconductor material.

8. The light-emitting device of claim 1, wherein the surface of the first layer includes a portion that is parallel to a surface of the light-generating region.

9. A light-emitting device comprising:

a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially; and

a layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material, wherein the layer of reflective material is positioned on an opposite side of the light-generating region as the first layer.

10. A light-emitting device, further comprising:

a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially; and

a layer including phosphor disposed over the surface of the first layer.

11. The light-emitting device of claim 10, wherein the layer including phosphor is substantially uniformly disposed over the surface of the first layer.

12. The light-emitting device of claim 10, further comprising a layer including a material that is substantially transparent to light that emerges from the light-emitting device, wherein the layer including the material that is substantially transparent is disposed adjacent the layer including phosphor.

13. A light-emitting device comprising:

a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially, wherein the first layer comprises a layer of n-doped gallium nitride semiconductor material, and the multi-layer stack further comprises a layer of p-doped III-V semiconductor material.