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Multi-bit ferroelectric memory device and methods of forming the same

  • US 9,219,225 B2
  • Filed: 10/31/2013
  • Issued: 12/22/2015
  • Est. Priority Date: 10/31/2013
  • Status: Active Grant
First Claim
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1. A method for forming a memory device, comprising:

  • forming a first ferroelectric material on a first side of a via;

    removing a material to expose a second side of the via; and

    forming a second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.

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