Method of manufacturing fluoride phosphor
First Claim
1. A method of manufacturing a fluoride phosphor, comprising:
- mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K2[M1-aMn4+aF6] wherein a satisfies 0<
a<
0.2, and M comprises at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn; and
mixing the phosphor cores and a fourth solution containing a reducing agent to form a surface region on each of the phosphor cores so that a concentration of tetravalent Mn on the surface region of one of the phosphor cores is lower than in an inner region of the one of the phosphor cores.
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Abstract
A method of manufacturing a fluoride phosphor includes mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K2[M1-aMn4+aF6] wherein a satisfies 0<a<0.2, and M includes at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn. The phosphor cores and a fourth solution containing a reducing agent are mixed to form a surface region on each of the phosphor cores so that a concentration of tetravalent Mn on the surface region of one of the phosphor cores is lower than in an inner region of the one of the phosphor cores.
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Citations
15 Claims
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1. A method of manufacturing a fluoride phosphor, comprising:
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mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K2[M1-aMn4+aF6] wherein a satisfies 0<
a<
0.2, and M comprises at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn; andmixing the phosphor cores and a fourth solution containing a reducing agent to form a surface region on each of the phosphor cores so that a concentration of tetravalent Mn on the surface region of one of the phosphor cores is lower than in an inner region of the one of the phosphor cores. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing a fluoride phosphor, comprising:
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mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K2[M1-aMn4+aF6] wherein a satisfies 0<
a<
0.2, and M comprises at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn;introducing the phosphor cores into the third solution; and mixing the third solution including the phosphor cores, a fourth solution containing a reducing agent, and the second solution which does not substantially contain tetravalent Mn to form a surface region on each of the phosphor cores such that a concentration of tetravalent Mn in the surface region of one of the phosphor cores is 0.5% or more and 30% or less with respect to a concentration of tetravalent Mn in an inner region of the one of the phosphor cores. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A method of manufacturing a fluoride phosphor, comprising:
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mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K2[M1-aMn4+aF6] wherein a satisfies 0<
a<
0.2, and M comprises at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn; andmixing the phosphor cores and a fourth solution containing a reducing agent. - View Dependent Claims (12, 13, 14, 15)
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Specification