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Method for manufacturing semiconductor device using oxide semiconductor

  • US 9,224,609 B2
  • Filed: 12/01/2010
  • Issued: 12/29/2015
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • adding oxygen into an oxide semiconductor film;

    performing a heat treatment on the oxide semiconductor film after the step of adding oxygen in a state where an entire top surface of the oxide semiconductor film is exposed; and

    forming an insulating film in contact with the oxide semiconductor film after the step of adding oxygen and the step of performing the heat treatment,wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

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