Method for manufacturing semiconductor device using oxide semiconductor
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- adding oxygen into an oxide semiconductor film;
performing a heat treatment on the oxide semiconductor film after the step of adding oxygen in a state where an entire top surface of the oxide semiconductor film is exposed; and
forming an insulating film in contact with the oxide semiconductor film after the step of adding oxygen and the step of performing the heat treatment,wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.
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Abstract
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
161 Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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adding oxygen into an oxide semiconductor film; performing a heat treatment on the oxide semiconductor film after the step of adding oxygen in a state where an entire top surface of the oxide semiconductor film is exposed; and forming an insulating film in contact with the oxide semiconductor film after the step of adding oxygen and the step of performing the heat treatment, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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etching an oxide semiconductor film to form an island-shaped oxide semiconductor film; adding oxygen into the island-shaped oxide semiconductor film; performing a heat treatment on the island-shaped oxide semiconductor film after the step of adding oxygen in a state where an entire top surface of the oxide semiconductor film is exposed; and forming an insulating film in contact with the island-shaped oxide semiconductor film after the step of adding oxygen and the step of performing the heat treatment, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method. - View Dependent Claims (7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween; etching the oxide semiconductor film to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween; adding oxygen into the island-shaped oxide semiconductor film; performing a heat treatment on the island-shaped oxide semiconductor film after the step of adding oxygen in a state where an entire top surface of the oxide semiconductor film is exposed; forming source and drain electrodes over the island-shaped oxide semiconductor film subjected to the heat treatment; and forming an insulating film in contact with the island-shaped oxide semiconductor film after the step of adding oxygen and the step of performing the heat treatment, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method. - View Dependent Claims (12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween; etching the oxide semiconductor film to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween; adding oxygen into the island-shaped oxide semiconductor film; performing a heat treatment on the island-shaped oxide semiconductor film after the step of adding oxygen in a state where an entire top surface of the oxide semiconductor film is exposed; forming source and drain electrodes over the island-shaped oxide semiconductor film subjected to the heat treatment; and forming an insulating film containing oxygen so as to be in contact with the island-shaped oxide semiconductor film after the step of adding oxygen and the step of performing the heat treatment, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method. - View Dependent Claims (17, 18, 19, 20)
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Specification