Method for producing a wafer provided with chips

• US 9,224,630 B2
• Filed: 03/31/2010
• Issued: 12/29/2015
• Est. Priority Date: 03/31/2010
• Status: Active Grant

• Current Assignee: EV Group E Thallner GmbH (Thallner Privatstiftung)
• Original Assignee: EV Group E Thallner GmbH (Thallner Privatstiftung)
• Inventors: Burggraf, Jrgen, Wimplinger, Markus, Wiesbauer, Harald
• Primary Examiner(s): Stark, Jarrett
• Assistant Examiner(s): Dinke, Bitew
• Application Number:
  US13/635,457
• Publication Number:
  US 20130011997A1
• Time in Patent Office: 2,099 Days
• Field of Search: 438/458, 438/107, 438/108, 438/109, 438/689, 438/692, 257/E21.211, 257/E21.499, 257/E23.06, 257/778, 257/E21.599, 257/698, 257/528, 257/615, 257/666, 257/88, 257/E21.219, 257/E21.23, 257/E23.031, 257/E29.002, 257/E29.089, 257/E29.324, 257/E29.325, 257/E33.001, 257/278, 257/415
• US Class Current: 1/1
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68331 of passive members, e.g. die mounting substrate
• CPC Class Codes: H01L 2221/68372 used to support a device or wafer when forming electrical connections thereto
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2221/68386 Separation by peeling
• CPC Class Codes: H01L 2221/6839 using peeling wedge or knife or bar
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/81001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/81005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/81192 wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/95001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/5384 : Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12042 : LASER

Abstract

A method for producing a product wafer having chips thereon, comprising the steps of:

• • processing the first side of the product wafer
  • bonding the product wafer with its first side onto a first rigid carrier wafer with a first intermediate layer consisting of one first adhesion layer applied at least on the edge side,
  • processing a second side of the product wafer,
  • bonding of the product wafer with its second side on a second rigid carrier wafer with a second intermediate layer consisting of one second adhesion layer applied at least on the edge side, characterized in that the first intermediate layer and the second intermediate layer are made different such that the first carrier wafer can be separated selectively before the second carrier wafer.

Claims

1. Method for producing a product wafer, the method including steps of:

bonding a first side of the product wafer to a first rigid carrier wafer with a first intermediate layer, the first intermediate layer including one first adhesion layer applied at least on the edge side of the first side of the product wafer, the first adhesion layer made of a first material,

processing a second side of the product wafer opposite to the first side by application of chips to the second side,

bonding the second side of the product wafer to a second rigid carrier wafer with a second intermediate layer, the second intermediate layer including;

one second adhesion layer applied at least on the edge side of the second side of the product wafer, the second adhesion layer being made of a second material wherein the first adhesion layer and the second adhesion layer are made from different materials such that both rigid carrier wafers bonded to the product wafer can be separated selectively from the product wafer,

after both the first rigid carrier wafer and the second rigid carrier wafer are bonded to the product wafer, applying a first force to the combination of the first rigid carrier wafer, the second rigid carrier wafer and the product wafer wherein the first rigid carrier wafer and the first intermediate layer are separated from the product wafer, and

after the first rigid carrier wafer and the first intermediate layer are separated from the product wafer, applying a second force to the second rigid carrier wafer wherein the second rigid carrier wafer and the second intermediate layer are separated from the product wafer.

2. Method as claimed in claim 1, wherein the first adhesion layer has a bonding force that is smaller than the bonding force of the second adhesion layer.

3. Method as claimed in claim 1, wherein a contact area between the first adhesion layer and the product wafer and/or the first rigid carrier wafer is smaller than the contact are between the second adhesion layer and the product wafer and/or the second rigid carrier wafer.

4. Method as claimed in claim 1, wherein said step of applying a first force includes exposing that first adhesion layer and the second adhesion layer to a first solvent wherein the first adhesion layer is at least partially dissolved by the first solvent, while the second adhesion layer is at least largely inert with reference to the first solvent.

5. Method as claimed in claim 1, wherein said step of applying a first force includes exposing the first adhesion layer and the second adhesion layer to a predetermined temperature wherein the first adhesion layer is at least partially dissolved and the second adhesion layer is at least largely unchanged so that the separation of the first carrier wafer can be effected before separation of the second carrier wafer.

6. Method as claimed in claim 1, wherein said step of applying a first force includes exposing the first adhesion layer and the second adhesion layer to a light source of a predetermined intensity and/or wavelength wherein the light source acts selectively on the first adhesion layer and/or the second adhesion layer.

7. Method as claimed in claim 1, wherein the first adhesion layer has a shear strength that is less than a shear strength of the second adhesion layer.

8. Method as claimed in claim 1, wherein the first and/or the second adhesion layer are made annular, especially in the region of the periphery of the product wafer.

9. Method as claimed in claim 1, wherein between the first carrier wafer and the first intermediate layer a first partial coating applied especially on the first carrier wafer is applied for reducing the bonding force/adhesion force in the region of the first partial coating and/or between the second carrier wafer and the second intermediate layer a second partial coating applied especially on the second carrier wafer is applied for reducing the bonding force/adhesion force in the region of the second partial coating.

10. Method as claimed in claim 1, wherein the first force is equal to the second force.

17. Method as claimed in claim 1, wherein both the first adhesion layer and the second adhesion layer are made of a polymer.

11. Method for producing a product wafer, the method including steps of

bonding a first side of the product wafer to a first rigid carrier wafer with a first intermediate layer, the first intermediate layer including one first adhesion layer applied at least on the edge side of the first side of the product wafer, the first adhesion layer made of a first material,

processing a second side of the product wafer opposite to the first side by application of chips to the second side,

bonding the second side of the product wafer to a second rigid carrier wafer with a second intermediate layer, the second intermediate layer including:

one second adhesion layer applied at least on the edge side of the second side of the product wafer and made of a second material, wherein a contact area between the first adhesion layer and the first rigid carrier wafer and/or the product wafer is less than a contact area between the second adhesion layer and the second rigid carrier wafer and/or the product wafer such that both rigid carrier wafers bonded to the product wafer can be separated selectively from the product wafer,

after both the first rigid carrier wafer and the second rigid carrier wafer are bonded to the product wafer, applying a first force to the combination of the first rigid carrier wafer, the second rigid carrier wafer and the product wafer wherein the first rigid carrier wafer and the first intermediate layer are separated from the product wafer, and

after the first rigid carrier wafer and the first intermediate layer are separated from the product wafer, applying a second force to the second rigid carrier wafer wherein the second rigid carrier wafer and the second intermediate layer are separated from the product wafer.

12. Method as claimed in claim 11, wherein the first and/or the second adhesion layer are made annular, especially in the region of the periphery of the product wafer.

13. Method as claimed in claim 11, wherein the first material and the second material are the same.

18. Method as claimed in claim 12, wherein a ratio of a ring width of the first adhesion layer to a ring width of the second adhesion layer is between about 1/10 and 9/10.

14. Method for producing a product wafer, the method including steps of:

bonding a first side of the product wafer to a first rigid carrier wafer with a first intermediate layer, the first intermediate layer including one first adhesion layer applied at least on the edge side of the first side of the product wafer, the first adhesion layer made of a first material,

processing a second side of the product wafer opposite to the first side by application of chips to the second side,

bonding the second side of the product wafer to a second rigid carrier wafer with a second intermediate layer, the second intermediate layer including;

one second adhesion layer applied at least on the edge side of the second side of the product wafer and made of a second material, wherein a thickness of the first adhesion layer is less than a thickness of the second adhesion layer such that both rigid carrier wafers bonded to the product wafer can be separated selectively from the product wafer,

after both the first rigid carrier wafer and the second rigid carrier wafer are bonded to the product wafer, applying a first force to the combination of the first rigid carrier wafer, the second rigid carrier wafer and the product wafer wherein the first rigid carrier wafer and the first intermediate layer are separated from the product wafer, and

after the first rigid carrier wafer and the first intermediate layer are separated from the product wafer, applying a second force to the second rigid carrier wafer wherein the second rigid carrier wafer and the second intermediate layer are separated from the product wafer.

15. Method as claimed in claim 14, wherein the first and/or the second adhesion layer are made annular, especially in the region of the periphery of the product wafer.

16. Method as claimed in claim 14, wherein the first material and the second material are the same.

19. Method as claimed in claim 14, wherein a ratio of a thickness of the first adhesion layer to a thickness of the second adhesion layer is about 2/3.