Methods of forming through silicon via openings
First Claim
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1. A method, comprising:
- forming an opening in a substrate, the opening completely extending through the substrate, wherein a recast material is formed on sidewalls of the substrate exposed by the opening;
applying a first chemical in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical; and
applying a second chemical in the opening to remove the residue of the first chemical, wherein the second chemical is different from the first chemical, wherein the second chemical contains a first component being substantially inactive with the substrate and a second component being substantially active with the material of the first chemical, wherein the first component is selected from the group consisting of helium, neon, argon, krypton, xenon, and radon, and the second component comprises hydride.
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Abstract
A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical.
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Citations
15 Claims
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1. A method, comprising:
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forming an opening in a substrate, the opening completely extending through the substrate, wherein a recast material is formed on sidewalls of the substrate exposed by the opening; applying a first chemical in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical; and applying a second chemical in the opening to remove the residue of the first chemical, wherein the second chemical is different from the first chemical, wherein the second chemical contains a first component being substantially inactive with the substrate and a second component being substantially active with the material of the first chemical, wherein the first component is selected from the group consisting of helium, neon, argon, krypton, xenon, and radon, and the second component comprises hydride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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providing a substrate having a first side and a second side opposite the first side; performing a laser ablating process to form an opening that extends from the first side of the substrate to the second side of the substrate, wherein the laser ablation process melts portions of the substrate, thereby leaving a recast material in the opening; removing the recast material with a first chemical, wherein the removing of the recast material leaves a residue of the first chemical in the opening; and removing the residue of the first chemical with a second chemical different from the first chemical, wherein the first chemical contains halogen and the second chemical contains a first component being substantially inactive with the substrate and a second component being substantially active with halogen, wherein the first component is selected from the group consisting of helium, neon, argon, krypton, xenon, and radon, and the second component comprises hydride. - View Dependent Claims (11, 12, 13, 14)
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15. A method, comprising:
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forming a through-silicon-via (TSV) opening in a silicon substrate through a laser process that melts the silicon of the silicon substrate, wherein the melted silicon adheres to a sidewall of the TSV opening after being cooled, thereby giving the TSV opening at least one of;
an hourglass shape and roughened sidewall surfaces;removing the melted silicon using a halogen-containing first chemical, wherein the halogen-containing first chemical leaves a residue in the TSV opening; removing the residue of the halogen-containing first chemical with a second chemical, the second chemical containing a first component that is substantially inactive with the silicon substrate; and a second component that is substantially active with halogen; and thereafter forming a conductive material in the TSV opening, wherein the first component is selected from the group consisting of helium, neon, argon, krypton, xenon, and radon, and the second component comprises hydride.
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Specification