Metal shielding layer in backside illumination image sensor chips and methods for forming the same

• US 9,224,773 B2
• Filed: 03/14/2012
• Issued: 12/29/2015
• Est. Priority Date: 11/30/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chang, Shih-Chieh, Tsai, Jian-Shin, Huang, Chih-Chang, Lee, Ing-Ju, Wu, Szu-An, Wang, Ying-Lang, Sun, Ching-Yao, Wu, Jyun-Ru, Huang, Ching-Che
• Primary Examiner(s): Wright, Tucker
• Application Number:
  US13/420,279
• Publication Number:
  US 20130134541A1
• Time in Patent Office: 1,385 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

Claims

1. A device comprising:

a semiconductor substrate having a front side and a backside;

a first photo-sensitive device at a surface of the semiconductor substrate, wherein the first photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate and convert the light signal to an electrical signal;

an adhesion layer on the backside of the semiconductor substrate, the adhesion layer comprising an amorphous region and grains, substantially all grains in the adhesion layer having sizes smaller than about 50 Å

, wherein the adhesion layer comprises a compound of nitrogen and a metal; and

a metal shielding layer on the backside of the semiconductor substrate and contacting the adhesion layer.

2. The device of claim 1 further comprising a second photo-sensitive device, wherein the metal shielding layer and the adhesion layer are over and aligned to the first photo-sensitive device, and wherein the metal shielding layer and the adhesion layer do not extend to over the second photo-sensitive device.

3. The device of claim 1, wherein the adhesion layer comprises a material selected from the group consisting essentially of tantalum nitride, titanium nitride, and combinations thereof.

4. The device of claim 1, wherein the metal shielding layer comprises aluminum copper.

5. The device of claim 1, wherein the first photo-sensitive device is disposed at a front surface of the semiconductor substrate.

6. The device of claim 1 further comprising a low-k dielectric layer on the front side of the semiconductor substrate.

7. The device of claim 1, wherein an atomic percentage of nitrogen in the adhesion layer is between about 15 percent and about 60 percent.

8. A device comprising:

a semiconductor substrate comprising a front surface and a back surface, wherein the back surface is over the front surface;

a first photo-sensitive device and a second photo-sensitive device at the front surface of the semiconductor substrate;

a dielectric layer over the back surface of the semiconductor substrate;

a first anti-reflective coating layer over the dielectric layer;

an adhesion layer over the first anti-reflective coating layer, wherein the adhesion layer comprises a compound of nitrogen and a metal;

a metal shielding layer over and contacting the adhesion layer, wherein the metal shielding layer is over and aligned to the first photo-sensitive device, and wherein the metal shielding layer does not extend to over the second photo-sensitive device; and

a passivation layer comprising a first portion over and aligned to the metal shielding layer, a second portion on a sidewall of the metal shielding layer, and a third portion over and aligned to the second photo-sensitive device, wherein the passivation layer is configured to act as a second anti-reflective coating layer, and wherein the device has a gray level uniformity of less than 7%, the gray level uniformity being measured by a ratio of a difference between a gray level at an edge of the semiconductor substrate and a gray level at a center of the semiconductor substrate to the gray level at the center of the semiconductor substrate.

9. The device of claim 8, wherein the adhesion layer comprises tantalum nitride.

10. The device of claim 8, wherein the second photo-sensitive device is configured to receive photons penetrating through the semiconductor substrate from the back surface of the semiconductor substrate, and wherein the first photo-sensitive device is blocked from receiving photons by the metal shielding layer.

11. The device of claim 8, wherein the adhesion layer is substantially free from grains that have sizes greater than about 50 Å

.

12. The device of claim 8, wherein the adhesion layer is an amorphous layer.

13. The device of claim 8 further comprising a first array of photo-sensitive devices and a second array of photo-sensitive devices, wherein the metal shielding layer and the adhesion layer are over and aligned to the first array of photo-sensitive devices, and wherein the second array of photo-sensitive devices is configured to receive photons penetrating through the semiconductor substrate from the back surface.

14. The device of claim 8, wherein an atomic percentage of nitrogen in the adhesion layer is between about 15 percent and about 60 percent.

15. A device comprising:

a semiconductor substrate comprising a front surface and a back surface, wherein the back surface is over the front surface;

a first photo-sensitive device and a second photo-sensitive device in the semiconductor substrate;

a first dielectric layer over the back surface of the semiconductor substrate;

a first anti-reflective coating layer over the first dielectric layer;

an adhesion layer over the first anti-reflective coating layer, wherein the adhesion layer comprises tantalum nitride, with an atomic percentage of nitrogen in the adhesion layer being higher than about 15 percent;

a metal shielding layer over the adhesion layer, wherein the metal shielding layer is over and aligned to the first photo-sensitive device;

a second dielectric layer comprising a first portion over and aligned to the metal shielding layer, a second portion on a sidewall of the metal shielding layer, and a third portion over and aligned to the second photo-sensitive device, wherein the second dielectric layer is configured to act as a second anti-reflective coating layer; and

a black level calibration circuit, the device having a gray level uniformity of less than 7%.

16. The device of claim 15, wherein substantially all grains in the adhesion layer have sizes smaller than about 50 Å

.

17. The device of claim 15, wherein the adhesion layer has an amorphous structure.

18. The device of claim 15, wherein the metal shielding layer, the adhesion layer, and the first dielectric layer do not extend to over the second photo-sensitive device, and edges of the metal shielding layer, the adhesion layer, and the first dielectric layer are aligned with each other.

19. The device of claim 15, wherein the metal shielding layer has a surface in physical contact with a surface of the adhesion layer.

20. The device of claim 15, wherein the metal shielding layer comprises aluminum copper.