Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFET
First Claim
1. A field effect transistor comprising:
- a semiconductor substrate having a first type conductivity;
an etch stop pad on said semiconductor substrate;
a semiconductor layer on said semiconductor substrate positioned laterally immediately adjacent to said etch stop pad and further extending over said etch stop pad;
a first well region extending from a top surface of said semiconductor layer into said semiconductor substrate such that said etch stop pad is contained within said first well region, said first well region having a second type conductivity different from said first type conductivity;
a second well region within said first well region at said top surface of said semiconductor layer and aligned above said etch stop pad, said second well region having said first type conductivity;
a source region within said second well region at said top surface of said semiconductor layer;
a drain region within said first well region at said top surface of said semiconductor layer and separated from said second well region, said source region and said drain region each having said second type conductivity; and
,a buried isolation region within said first well region aligned below said etch stop pad.
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Abstract
Disclosed are a field effect transistor (FET) (e.g., a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET)) and a method of forming the FET. In the FET, an etch stop pad is on a semiconductor substrate (e.g., a P-type silicon substrate). A semiconductor layer (e.g., a silicon layer) is also on the substrate and extends laterally over the etch stop pad. A first well region (e.g., an N-well region) extends through the semiconductor layer into the substrate such that it contains the etch stop pad. A second well region (e.g., a P-well region) is in the first well region aligned above the etch stop pad. A source region (e.g., a N-type source region) is in the second well region. A buried isolation region (e.g., a buried air-gap isolation region) is within the first well region aligned below the etch stop pad so as to limit vertical capacitor formation.
32 Citations
20 Claims
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1. A field effect transistor comprising:
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a semiconductor substrate having a first type conductivity; an etch stop pad on said semiconductor substrate; a semiconductor layer on said semiconductor substrate positioned laterally immediately adjacent to said etch stop pad and further extending over said etch stop pad; a first well region extending from a top surface of said semiconductor layer into said semiconductor substrate such that said etch stop pad is contained within said first well region, said first well region having a second type conductivity different from said first type conductivity; a second well region within said first well region at said top surface of said semiconductor layer and aligned above said etch stop pad, said second well region having said first type conductivity; a source region within said second well region at said top surface of said semiconductor layer; a drain region within said first well region at said top surface of said semiconductor layer and separated from said second well region, said source region and said drain region each having said second type conductivity; and
,a buried isolation region within said first well region aligned below said etch stop pad. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A field effect transistor comprising:
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a silicon substrate having a P-type conductivity; an etch stop pad on said silicon substrate; a silicon layer on said silicon substrate positioned laterally immediately adjacent to said etch stop pad and further extending over said etch stop pad; a first well region extending from a top surface of said silicon layer into said silicon substrate such that said etch stop pad is contained within said first well region, said first well region having a N-type conductivity; a second well region within said first well region at said top surface of said silicon layer and aligned above said etch stop pad, said second well region having said P-type conductivity; a source region within said second well region at said top surface of said silicon layer; a drain region within said first well region at said top surface of said silicon layer and separated from said second well region, said source region and said drain region each having said N-type conductivity; and
,a buried isolation region within said first well region aligned below said etch stop pad. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of forming a field effect transistor, said method comprising:
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forming an etch stop pad on a semiconductor substrate having a first type conductivity; forming a semiconductor layer on said semiconductor substrate positioned laterally adjacent to said etch stop pad and further extending over said etch stop pad; forming a first well region extending from a top surface of said semiconductor layer into said semiconductor substrate such that said first well region has a second type conductivity different from said first type conductivity and such that said first well region contains said etch stop pad; forming a second well region within said first well region at said top surface of said semiconductor layer and aligned above said etch stop pad, said second well region having said first type conductivity; forming a gate structure on a top surface of said semiconductor layer above said first well region and overlapping an edge portion of said second well region; forming a source region and a drain region each having said second type conductivity, said source region being formed within said second well region at said top surface of said semiconductor layer adjacent to a first sidewall of said gate structure and said drain region being formed within said first well region at said top surface of said semiconductor layer adjacent to a second sidewall of said gate structure opposite said first sidewall; and
,forming a buried isolation region within said first well region and aligned below said etch stop pad and said second well region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification