Method and apparatus for Class AB audio amplifier output stage voltage protection

• US 9,225,303 B1
• Filed: 07/11/2014
• Issued: 12/29/2015
• Est. Priority Date: 07/11/2014
• Status: Active Grant

• Current Assignee: Nuvoton Technology Corporation (Winbond Electronics Corporation)
• Original Assignee: Nuvoton Technology Corporation (Winbond Electronics Corporation)
• Inventors: Nieland, Jan-Harm
• Primary Examiner(s): Choe, Henry
• Application Number:
  US14/329,810
• Publication Number:
  US 20160013768A1
• Time in Patent Office: 536 Days
• Field of Search: 330/267, 330/264
• US Class Current: 1/1
• CPC Class Codes: H03F 1/523 for amplifiers using field-effect devices H03F1/526 takes precedence
• CPC Class Codes: H03F 2200/03 the amplifier being designed for audio applications
• CPC Class Codes: H03F 2200/219 Follower transistors are added at the input of the amplifier, e.g. source or emitter followers
• CPC Class Codes: H03F 2200/426 the amplifier comprising circuitry for protection against overload
• CPC Class Codes: H03F 2203/30084 the pull circuit of the SEPP amplifier being a cascode circuit
• CPC Class Codes: H03F 2203/30117 the push circuit of the SEPP amplifier being a cascode circuit
• CPC Class Codes: H03F 3/187 in integrated circuits
• CPC Class Codes: H03F 3/303 using opamps as driving stages

Abstract

An output circuit for a class AB push-pull amplifier includes an upper cascode output stage and a lower cascode output stage. The upper cascode stage includes first and second PMOS transistors connected in series between a positive power supply node and an output node, the first PMOS transistor configured to receive a first complementary input signal. The lower cascode output stage includes first and second NMOS transistors connected in series between a negative power supply node and the output node, the first NMOS transistor configured to receive a second complementary input signal. The output circuit also includes a bias circuit configured for providing a first bias voltage to a gate node of the second NMOS transistor and a second bias voltage to a gate node of the second PMOS transistor, in which the first and the second bias voltages being substantially proportional to the output voltage.

Claims

1. An output circuit for an amplifier, comprising:

a first power node for coupling to a positive power supply;

a second power node for coupling to a negative power supply,

an output node;

first and second PMOS transistors connected in series between the first power node and the output node;

first and second NMOS transistors connected in series between the output node and the second power node;

a first input terminal coupled to a gate of the first PMOS transistor;

a second input terminal coupled to a gate of the first NMOS transistor;

a voltage divider coupled between the output node and a ground node GND, the voltage divider including first and second resistors which are connected at a first node;

a first source follower including a third PMOS transistor, the third PMOS transistor having a gate coupled to the first node and a source coupled to a gate of the second NMOS transistor; and

a second source follower including a third NMOS transistor, the third NMOS transistor having a gate coupled to the first node and a source coupled to a gate of the second PMOS transistor.

2. The circuit of claim 1, wherein the first PMOS transistor is configured to receive a first input signal, and the first NMOS transistor is configured to receive a second input signal.

3. The circuit of claim 1, wherein a bias voltage at the gate of the second NMOS transistor is configured to follow a voltage at the output node.

4. The circuit of claim 3, wherein a drain voltage of the first NMOS transistor is determined by the resistance values of the first and the second resistors and the threshold voltages of the third PMOS transistor and the second NMOS transistor.

5. The circuit of claim 3, wherein the first NMOS transistor is characterized by a drain-to-source voltage that is below a first voltage limit during operation.

6. The circuit of claim 1, wherein a bias voltage at the gate of the second PMOS transistor is configured to follow a voltage at the output node.

7. The circuit of claim 6, wherein a drain voltage of the first PMOS transistor is determined by the resistance values of the first and the second resistors and the threshold voltages of the third NMOS transistor and the second PMOS transistor.

8. The circuit of claim 6, wherein the first PMOS transistor is characterized by a drain-to-source voltage that is below a second voltage limit during operation.

9. The circuit of claim 6, wherein a bias voltage at the gate of the second NMOS transistor is configured to follow a voltage at the output node.

10. An output circuit for a class AB push-pull amplifier, comprising:

an upper cascode output stage including first and second PMOS transistors connected in series between a positive power supply node and an output node, the first PMOS transistor configured to receive a first complementary input signal;

a lower cascode output stage including first and second NMOS transistors connected in series between a negative power supply node and the output node, the first NMOS transistor configured to receive a second complementary input signal; and

a bias circuit, including;

a voltage divider coupled to the output node configured for providing a first voltage signal that is related to the voltage at the output node;

a first source follower coupled to receive the first voltage signal and configured for providing a first bias voltage to a gate node of the second NMOS transistor in the lower cascode output stage; and

a second source follower coupled to receive the first voltage signal and configured for providing a second bias voltage to a gate node of the second PMOS transistor in the upper cascode output stage.

11. The output circuit of claim 10, wherein the first source follower comprises a third PMOS transistor, the third PMOS transistor having a gate coupled to a first node of the voltage divider and a source coupled to a gate of the second NMOS transistor.

12. The output circuit of claim 10, wherein the second source follower comprises a third NMOS transistor, the third NMOS transistor having a gate coupled to a first node of the voltage divider and a source coupled to a gate of the second PMOS transistor.

13. The output circuit of claim 10, wherein the first NMOS transistor is characterized by a drain-to-source voltage that is below a first voltage limit during operation.

14. The output circuit of claim 10, wherein the first PMOS transistor is characterized by a drain-to-source voltage that is below a second voltage limit during operation.

15. An output circuit for a class AB push-pull amplifier, comprising:

an upper cascode output stage including first and second PMOS transistors connected in series between a positive power supply node and an output node, the first PMOS transistor configured to receive a first complementary input signal;

a lower cascode output stage including first and second NMOS transistors connected in series between a negative power supply node and the output node, the first NMOS transistor configured to receive a second complementary input signal; and

a bias circuit configured for providing a first bias voltage to a gate node of the second NMOS transistor and a second bias voltage to a gate node of the second PMOS transistor, the first and the second bias voltages being substantially proportional to the output voltage.

16. The output circuit of claim 15, wherein the bias circuit comprises:

a voltage divider coupled to the output node configured for providing a first voltage signal that is proportional to the voltage at the output node;

a first source follower coupled to receive the first voltage signal and configured for providing the first bias voltage to the gate node of the second NMOS transistor; and

a second source follower coupled to receive the first voltage signal and configured for providing the second bias voltage to the gate node of the second PMOS transistor.

17. The output circuit of claim 16, wherein the first source follower comprises a third PMOS transistor, the third PMOS transistor having a gate coupled to a first node and a source coupled to a gate of the second NMOS transistor.

18. The output circuit of claim 16, wherein the second source follower comprises a third NMOS transistor, the third NMOS transistor having a gate coupled to a first node and a source coupled to a gate of the second PMOS transistor.

19. The output circuit of claim 15, wherein the first NMOS transistor is characterized by a drain-to-source voltage that is below a first voltage limit during operation.

20. The output circuit of claim 15, wherein the first PMOS transistor is characterized by a drain-to-source voltage that is below a second voltage limit during operation.