Microelectromechanical sensing structure for a capacitive acoustic transducer including an element limiting the oscillations of a membrane, and manufacturing method thereof

• US 9,226,079 B2
• Filed: 03/20/2014
• Issued: 12/29/2015
• Est. Priority Date: 03/21/2013
• Status: Active Grant

• Current Assignee: STMicroelectronics International N.V. (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Sciutti, Alessandra, Perletti, Matteo, Conti, Sebastiano, Carminati, Roberto
• Primary Examiner(s): NGUYEN, TUAN DUC
• Application Number:
  US14/220,985
• Publication Number:
  US 20140286509A1
• Time in Patent Office: 649 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 7/0029 Protection against environmental influences not provided for in groups B81B7/0012 - B81B7/0025
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 19/04 Microphones H04R19/01 takes precedence

Abstract

A microelectromechanical sensing structure for a capacitive acoustic transducer, including: a semiconductor substrate; a rigid electrode; and a membrane set between the substrate and the rigid electrode, the membrane having a first surface and a second surface, which are in fluid communication, respectively, with a first chamber and a second chamber, respectively, the first chamber being delimited at least in part by a first wall portion and a second wall portion formed at least in part by the substrate, the second chamber being delimited at least in part by the rigid electrode, the membrane being moreover designed to undergo deformation following upon incidence of pressure waves and facing the rigid electrode so as to form a sensing capacitor having a capacitance that varies as a function of the deformation of the membrane. The structure moreover includes a beam, which is connected to the first and second wall portions and is designed to limit the oscillations of the membrane.

Claims

1. A microelectromechanical sensing structure, comprising:

a substrate of semiconductor material;

a sensing capacitor that includes;

a rigid conductive electrode;

a conductive membrane coupled to the substrate and arranged between the substrate and the electrode, the membrane having a first surface and a second surface, the membrane being configured to deform in response to pressure, the sensing capacitor having a capacitance that varies as a function of the deformation of the membrane;

a first chamber delimited at least in part by the substrate and the first surface of the membrane;

a second chamber being delimited at least in part by the electrode and the second surface of the membrane; and

a beam located in the first chamber and coupled to the substrate, the beam being configured to limit oscillations of the membrane when the pressure has an amplitude that is above a first threshold, thereby preventing plastic deformation of the membrane.

2. The microelectromechanical sensing structure according to claim 1, wherein:

the beam is configured to limit oscillations of the membrane when the amplitude is above the first threshold by abutting against the membrane; and

when the pressure has an amplitude that is below a second threshold, the membrane is free to oscillate.

3. The microelectromechanical sensing structure according to claim 1, wherein the substrate includes a through opening that extends into the first chamber, wherein the beam is located in the through opening.

4. The microelectromechanical sensing structure according to claim 3, wherein the membrane has a membrane thickness, and in the rest condition, the membrane located a distance from the beam, wherein the distance is between two and four times the membrane thickness.

5. The microelectromechanical sensing structure according to claim 3, wherein the beam has a longitudinal length along an axis, the first and second surfaces of the membrane being parallel to said axis when the membrane is in the resting condition.

6. The microelectromechanical sensing structure according to claim 5, wherein the beam has a contact surface configured to contact the membrane and having a first area not greater than 30% of a second area of a cross section of the through opening, the cross section being taken in a plane coplanar to the contact surface.

7. The microelectromechanical sensing structure according to claim 1, wherein the beam has a first thickness and the substrate has a second thickness that is substantially equal to the first thickness.

8. The microelectromechanical sensing structure according to claim 1, wherein the beam has a first thickness and the substrate has a second thickness that is greater than the first thickness.

9. The microelectromechanical sensing structure according to claim 1, wherein the beam is made of semiconductor material.

10. A microelectromechanical acoustic transducer comprising:

a sensitive structure that includes;

a semiconductor substrate having a through opening delimited by sidewalls;

a sensing capacitor that includes;

a rigid conductive electrode;

a conductive membrane coupled to the substrate and located between the substrate and the electrode, the membrane having a first surface and a second surface, the membrane being configured to deform in response to pressure, the sensing capacitor having a capacitance that varies as a function of the deformation of the membrane;

a first chamber delimited at least in part by the sidewalls of the through opening of the substrate and the first surface of the membrane;

a second chamber being delimited at least in part by the electrode and the second surface of the membrane; and

a beam located in the first chamber and coupled to the substrate, the beam being configured to limit oscillations of the membrane when the pressure has an amplitude that is above a first threshold, the first threshold being within an elastic deformation range of the membrane; and

an electronic read circuit operatively coupled to said sensitive structure and configured for output an electrical detection signal indicative of the capacitance of said sensing capacitor.

11. The microeletromechanical acoustic transducer according to claim 10 wherein the membrane includes a through hole that places the first chamber is fluid communication with the second chamber.

12. The microeletromechanical acoustic transducer according to claim 10 wherein the beam has a longitudinal length that spans a length of the through opening of the substrate and a width that is a fraction of the through opening.

13. The microeletromechanical acoustic transducer according to claim 10 wherein the beam is part of the substrate.

14. The microeletromechanical acoustic transducer according to claim 10 wherein the substrate has a first thickness and the beam has a second thickness that is smaller than the first thickness.

15. The microeletromechanical acoustic transducer according to claim 10 wherein the electrode has a plurality of through holes that place the second chamber is fluid communication with an environment that is outside of the microelectromechancial acoustic transducer.

16. An electronic device comprising:

an acoustic transducer including;

a sensitive structure that includes;

a semiconductor substrate having a through opening delimited by sidewalls;

a sensing capacitor that includes;

a rigid conductive electrode;

a conductive membrane coupled to the substrate and located between the substrate and the electrode, the membrane having a first surface and a second surface, the membrane being configured to deform in response to pressure, the sensing capacitor having a capacitance that varies as a function of the deformation of the membrane;

a first chamber delimited at least in part by the sidewalls of the through opening of the substrate and the first surface of the membrane;

a second chamber being delimited at least in part by the electrode and the second surface of the membrane; and

a beam located in the first chamber and coupled to the substrate, the beam being configured to limit oscillations of the membrane when the pressure has an amplitude that is above a first threshold, wherein below the first threshold the membrane is configured to elastically deform and above the first threshold the membrane is configured to plastically deform; and

an electronic read circuit operatively coupled to said sensitive structure and configured for output an electrical detection signal indicative of the capacitance of said sensing capacitor.

17. The electronic device according to claim 16 wherein said electronic device is at least one of the following:

a cellphone, a personal digital assistant, a notebook, a voice recorder, an audio player with functions of voice recorder, a console for videogames, a hydrophone, and a hearing-aid device.

18. A process comprising:

forming a rigid electrode; and

forming a conductive membrane that is coupled to a substrate and arranged between the substrate and the electrode, the membrane having a first surface and a second surface, the membrane being configured to deform in response to pressure, the membrane and the electrode forming a sensing capacitor having a capacitance that varies as a function of the deformation of the membrane;

forming a first chamber that is delimited at least in part by the electrode and the second surface of the membrane;

forming a second chamber that is delimited at least in part by the first surface of the membrane and the substrate; and

forming a beam that is coupled to the substrate and is configured to limit oscillations of the membrane that are above a threshold, thereby preventing plastic deformation of the membrane.

19. The process according to claim 18, further comprising forming a through hole having sidewalls in the substrate, the second chamber being delimited at least in part by the sidewalls of the through hole in the substrate.

20. The process according to claim 18, wherein forming the beam comprises etching the substrate to form the beam.

21. The process according to claim 18, wherein forming the beam comprises forming a beam having a first thickness that is less than a second thickness of the substrate.