Power semiconductor module
First Claim
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1. A power semiconductor module comprising:
- a common connection terminal that is a collector terminal;
external connection terminals, including a gate connection terminal and an emitter connection terminal;
a heat dissipation substrate electrically connected to the common connection terminal; and
a plurality of electronic elements disposed on the heat dissipation substrate, the electronic elements having varying spaces therebetween and being disposed such that spaces therebetween are increased in width in a direction closer to the common connection terminal.
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Abstract
There is provided a power semiconductor module in which power semiconductor elements, integration of which may be difficult due to heating, are modularized. The power semiconductor module includes: a heat dissipation substrate electrically connected to a common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, wherein the electronic elements have varying spaces therebetween.
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Citations
13 Claims
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1. A power semiconductor module comprising:
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a common connection terminal that is a collector terminal; external connection terminals, including a gate connection terminal and an emitter connection terminal; a heat dissipation substrate electrically connected to the common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, the electronic elements having varying spaces therebetween and being disposed such that spaces therebetween are increased in width in a direction closer to the common connection terminal. - View Dependent Claims (2, 3, 4, 5)
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6. A power semiconductor module comprising:
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a heat dissipation substrate electrically connected to a common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, the plurality of electronic elements having varying spaces therebetween, wherein the electronic elements are classified as first, second, third, and fourth electronic elements according to an order in which the electronic elements are disposed to be adjacent to the common connection terminal, and intervals X1, X2, and X3 between the electronic elements satisfy Equation 1 shown below;
0.8d>
X1+X2+X3>
0.4d
[Equation 1]wherein d is an overall length of the heat dissipation substrate 50, X1 is a space between the first electronic element and the second electronic element, X2 is a space between the second electronic element and the third electronic element, and X3 is a space between the third electronic element and the fourth electronic element. - View Dependent Claims (7, 8)
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9. A power semiconductor module comprising:
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a heat dissipation substrate electrically connected to a common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, the plurality of electronic elements having varying spaces therebetween, the heat dissipation substrate having different thicknesses according to positions of the electronic elements. - View Dependent Claims (10, 11, 12)
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13. A power semiconductor module comprising:
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a common connection terminal that is a collector terminal; a plurality of external connection terminals, including a gate terminal and an emitter terminal; and a plurality of power semiconductor packages disposed in a row from the common connection terminal and electrically connected to the common connection terminal, the power semiconductor packages being disposed such that spaces therebetween are reduced in a direction away from the common connection terminal.
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Specification