Wafer level packaged infrared (IR) focal plane array (FPA) with evanescent wave coupling

• US 9,227,839 B2
• Filed: 05/06/2014
• Issued: 01/05/2016
• Est. Priority Date: 05/06/2014
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Gooch, Roland W., Black, Stephen H., Kocian, Thomas A., Kennedy, Adam M., Diep, Buu Q.
• Primary Examiner(s): Oh, Jaehwan
• Application Number:
  US14/270,945
• Publication Number:
  US 20150321905A1
• Time in Patent Office: 609 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0207 Bolometers
• CPC Class Codes: B81B 7/0035 for maintaining a controlled atmosphere inside of the chamber containing the MEMS
• CPC Class Codes: B81B 7/0067 for controlling the passage of optical signals through the package
• CPC Class Codes: B81C 1/00317 Packaging optical devices
• CPC Class Codes: G01J 5/045 Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements getter arrangements per se H01L23/26 and H01L21/3221
• CPC Class Codes: G01J 5/08 Optical arrangements
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H10N 15/00 Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect integrated devices or assemblies of multiple devices H10N19/00

Abstract

A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer.

Claims

1. A structure for detecting electromagnetic radiation having a predetermined wavelength, comprising:

a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation;

a cover wafer having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a r;

mrfoce of the sensing element;

a bond gap spacer structure for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a predetermined distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer, wherein the bond gap spacer forms a gap between the surface of the sensing element and the opposing surface of the transparent region of the cover wafer to enable evanescent wave coupling across the gap.

2. A structure for detecting electromagnetic radiation having a predetermined wavelength, comprising:

a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation;

a bulk silicon cover wafer having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element;

a bond gap spacer structure for supporting the surface of the sensing element from an opposing surface of the transparent region of the bulk silicon cover wafer a predetermined distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer, wherein the bond gap spacer forms a gap between the surface of the sensing element and the opposing surface of the transparent region of the cover wafer to enable evanescent wave coupling across the gap.

3. The structure recited in claim 2 wherein the cover wafer has a thickness of about 500 to 700 microns, and a groove having a depth of about 25 to 50 micrometers disposed in surface thereof and disposed about the window, the window being disposed in the inner portion of the cover wafer.

4. The structure recited in claim 2 wherein the bond gap spacer forms a gap between the surface of the sensing element and the opposing surface of the transparent region of the cover wafer to enable evanescent wave coupling across the gap.

5. The structure recited in claim 2, wherein the wavelength is between 7 to 13 micrometers.

6. The structure recited in claim 5 wherein the gap is about 10,000 to 25, 000 Angstroms.

7. The structure recited in claim 3 wherein the wavelength is between 7 to 13 micrometers.

8. The structure recited in claim 7 wherein the gap is about about 10,000 to 25,000 Angstroms.

9. The structure recited in claim 2, wherein the sensing element is a bolometer.

10. The structure recited in claim 2 wherein the sensing element is a bolometer.

11. The structure recited in claim 3 wherein the sensing element is a bolometer.

12. The structure recited in claim 4 wherein the sensing element is a bolometer.

13. The structure recited in claim 5 wherein the sensing element is a bolometer.

14. The structure recited in claim 6 wherein the sensing element is a bolometer.