Micro-electro mechanical apparatus with PN-junction

• US 9,227,840 B2
• Filed: 09/16/2014
• Issued: 01/05/2016
• Est. Priority Date: 12/31/2013
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Su, Chung-Yuan, Kuo, Chin-Fu, Huang, Chao-Ta, Chen, Chih-Yuan
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): ESKRIDGE, CORY W
• Application Number:
  US14/487,104
• Publication Number:
  US 20150183632A1
• Time in Patent Office: 476 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0228 Inertial sensors
• CPC Class Codes: B81B 2201/025 Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
• CPC Class Codes: B81B 2203/0109 Bridges
• CPC Class Codes: B81B 7/008 MEMS characterised by an electronic circuit specially adapted for controlling or driving the same B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00
• CPC Class Codes: G01P 15/00 Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
• CPC Class Codes: G01P 15/124 by semiconductor devices comprising at least one PN junction, e.g. transistors
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0831 the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
• CPC Class Codes: G01P 2015/0834 the mass constituting a pendulum having the pivot axis disposed symmetrically between the longitudinal ends, the center of mass being shifted away from the plane of the pendulum which includes the pivot axis
• CPC Class Codes: G01R 33/00 Arrangements or instruments for measuring magnetic variables
• CPC Class Codes: G01R 33/0286 comprising microelectromechanical systems [MEMS] MEMS devices in general B81B

Abstract

A micro-electro mechanical apparatus having a PN-junction is provided. The micro-electro mechanical apparatus includes a movable mass, a conductive layer, and an electrode. The movable mass includes a P-type semiconductor layer and an N-type semiconductor layer. The PN-junction is formed between the P-type semiconductor layer and the N-type semiconductor layer. The micro-electro mechanical apparatus is capable of eliminating abnormal voltage signal when an alternating current passes through the conductive layer. The micro-electro mechanical apparatus is adapted to measure acceleration and magnetic field. The micro-electro mechanical apparatus can be other types of micro-electro mechanical apparatus such as micro-electro mechanical scanning micro-mirror.

Claims

1. A micro-electro mechanical apparatus, comprising:

a substrate including an electrode disposed on a top surface of the substrate;

a movable mass, being disposed above the electrode, including;

a first P-type semiconductor layer;

a first N-type semiconductor layer connected to the first P-type semiconductor layer;

a first PN-junction formed between the first P-type semiconductor layer and the first N-type semiconductor layer;

a first conductive layer; and

a first electrical insulation layer disposed between the movable mass and the first conductive layer.

2. The micro-electro mechanical apparatus according to claim 1, further comprising a first anchor including:

a second P-type semiconductor layer;

a second N-type semiconductor layer connected to the second P-type semiconductor layer; and

a second PN-junction formed between the second P-type semiconductor layer and the second N-type semiconductor layer.

3. The micro-electro mechanical apparatus according to claim 2, further comprising a first spring including:

a third P-type semiconductor layer;

a third N-type semiconductor layer connected to the third P-type semiconductor layer; and

a third PN-junction formed between the third P-type semiconductor layer and the third N-type semiconductor layer, wherein the first spring is connected to the movable mass, the third P-type semiconductor layer is connected to the first P-type semiconductor layer and to the second P-type semiconductor layer.

4. The micro-electro mechanical apparatus according to claim 3, further comprising a second spring, wherein the movable mass is a frame configured to rotate about an axis, the second spring is disposed in the frame and is connected to the movable mass, the second spring and the first spring are arranged along a straight line which is parallel to the axis.

5. The micro-electro mechanical apparatus according to claim 2, wherein the first anchor further comprises a first trench dividing the first anchor into a first inner anchor and a first outer anchor which are electrically insulated from each other, the first inner anchor comprises the second P-type semiconductor layer and the second N-type semiconductor layer, the first outer anchor comprises the second N-type semiconductor layer, the second P-type semiconductor layer of the first inner anchor is disposed on a bottom surface and a lateral surface of the second N-type semiconductor layer of the first inner anchor.

6. The micro-electro mechanical apparatus according to claim 5, wherein the first anchor further comprises:

a second electrical insulation layer disposed on the first inner anchor, the first outer anchor and the first trench;

a second conductive layer disposed on the second electrical insulation layer; and

a conductive post penetrating the second electrical insulation layer of the first anchor, wherein the conductive post connects the second conductive layer and the first outer anchor.

7. The micro-electro mechanical apparatus according to claim 5, further comprising a first spring including:

a third P-type semiconductor layer;

a third N-type semiconductor layer connecting the third P-type semiconductor layer; and

a third PN-junction formed between the third P-type semiconductor layer and the third N-type semiconductor layer, wherein the third P-type semiconductor layer is connected to the first P-type semiconductor layer and to the second P-type semiconductor layer of the first inner anchor.

8. The micro-electro mechanical apparatus according to claim 2, wherein the second P-type semiconductor layer is disposed on a bottom surface and a lateral surface of the second N-type semiconductor layer.

9. The micro-electro mechanical apparatus according to claim 3, wherein the second P-type semiconductor layer is disposed on a bottom surface and a lateral surface of the second N-type semiconductor layer, the second P-type semiconductor layer covers the entire bottom surface of the second N-type semiconductor layer, and the second P-type semiconductor layer is connected to the third P-type semiconductor layer.

10. The micro-electro mechanical apparatus according to claim 4, further comprising a second anchor disposed in the frame, wherein the second anchor comprises:

a second trench dividing the second anchor into a second inner anchor and a second outer anchor which are electrically insulated from each other;

a second electrical insulation layer disposed on the second inner anchor, the second outer anchor and the second trench;

a second conductive layer disposed on the second electrical insulation layer; and

a conductive post penetrating the second electrical insulation layer of the second anchor, wherein the conductive post connects the second conductive layer of the second anchor and the second inner anchor of the second anchor.

11. The micro-electro mechanical apparatus according to claim 1, wherein the first P-type semiconductor layer is electrically coupled to a first polarization voltage, the first N-type semiconductor layer is electrically coupled to a second polarization voltage, the second polarization voltage is greater than or equal to the first polarization voltage, the first conductive layer comprises a first end and a second end, the first end is electrically coupled to a ground, the second end is electrically coupled to the alternating current power source, and the electrode is electrically coupled to the ground together with the first end.

12. The micro-electro mechanical apparatus according to claim 1, wherein the movable mass is configured to rotate about an axis, a bottom surface of the first P-type semiconductor layer faces the electrode, a bottom surface of the first N-type semiconductor is connected to a top surface of the first P-type semiconductor, the first electrical insulation layer is disposed on a top surface of the first N-type semiconductor layer, and the first conductive layer is disposed on the first electrical insulation layer.

13. A micro-electro mechanical apparatus, being capable of detecting a magnetic force, comprising:

a substrate including an electrode disposed on a top surface of the substrate;

a movable mass, being disposed above the electrode and configured to rotate about an axis, including;

a first P-type semiconductor layer having a bottom surface facing the electrode;

a first N-type semiconductor layer having a bottom surface connected to a top surface of the first P-type semiconductor layer;

a first PN-junction formed between the first P-type semiconductor layer and the first N-type semiconductor layer;

a first electrical insulation layer disposed on a top surface of the first N-type semiconductor layer;

a first conductive layer disposed on the first electrical insulation layer; and

a first spring, being connected to the movable mass along a direction parallel to the axis, including;

a third P-type semiconductor layer connected to the first P-type semiconductor layer;

a third N-type semiconductor layer having a bottom surface connected to a top surface of the third P-type semiconductor layer; and

a third PN-junction formed between the third P-type semiconductor layer and the third N-type semiconductor layer.

14. The micro-electro mechanical apparatus according to claim 13, further comprising a second spring connected to the movable mass, wherein the movable mass is a frame, the second spring disposed in the frame, the second spring and the first spring are arranged along a straight line which is parallel to the axis.

15. The micro-electro mechanical apparatus according to claim 14, further comprising:

a second anchor, being disposed in the frame, including;

a second trench dividing the second anchor into a second inner anchor and a second outer anchor which are electrically insulated from each other;

a second electrical insulation layer disposed on the second inner anchor, the second outer anchor and the second trench;

a second conductive layer disposed on the second electrical insulation layer; and

a conductive post penetrating the second electrical insulation layer of the second anchor, wherein the conductive post connects the second conductive layer and the second inner anchor of the second anchor.

16. The micro-electro mechanical apparatus according to claim 13, wherein the first P-type semiconductor layer is electrically coupled to a first polarization voltage, the first N-type semiconductor layer is electrically coupled to a second polarization voltage, the second polarization voltage is greater than or equal to the first polarization voltage, the first conductive layer further comprises a first end and a second end, the first end is electrically coupled to a ground, the second end is electrically coupled to an alternating current power source, and the electrode is electrically coupled to the ground.

17. A micro-electro mechanical apparatus, comprising:

a substrate including an electrode disposed on a top surface of the substrate;

a movable mass, being disposed above the electrode and configured to rotate about an axis, including;

a first P-type semiconductor layer having a bottom surface facing the electrode;

a first N-type semiconductor layer having a bottom surface connected to a top surface of the first P-type semiconductor layer;

a first PN-junction formed between the first P-type semiconductor layer and the first N-type semiconductor layer;

a first electrical insulation layer disposed on a top surface of the first N-type semiconductor layer;

a first conductive layer disposed on the first electrical insulation layer;

a first spring connected to the frame; and

a second spring disposed in the frame and connected to the frame;

wherein the second spring and the first spring are arranged along a straight line which is parallel to the axis.

18. The micro-electro mechanical apparatus according to claim 17, further comprising a first anchor including:

a second P-type semiconductor layer having a bottom surface facing the substrate;

a second N-type semiconductor layer having a bottom surface connected to a top surface of the second P-type semiconductor layer; and

a second PN-junction formed between the second P-type semiconductor layer and the second N-type semiconductor layer.

19. The micro-electro mechanical apparatus according to claim 18, wherein the first anchor further comprises:

a first trench dividing the first anchor into a first inner anchor and a first outer anchor which are electrically insulated from each other, wherein the first inner anchor comprises the second P-type semiconductor layer and the second N-type semiconductor layer, the first outer anchor comprises the second N-type semiconductor layer, the second P-type semiconductor layer of the first inner anchor is disposed on the bottom surface and a lateral surface of the second N-type semiconductor layer of the first inner anchor.

20. The micro-electro mechanical apparatus according to claim 19, wherein the first anchor further comprises:

a second electrical insulation layer disposed on the first inner anchor, the first outer anchor and the first trench;

a second conductive layer disposed on the second electrical insulation layer; and

a conductive post penetrating the second electrical insulation layer of the first anchor, wherein the conductive post connects the second conductive layer and the first outer anchor of the first anchor.

21. The micro-electro mechanical apparatus according to claim 19, wherein the first spring comprises:

a third P-type semiconductor layer;

a third N-type semiconductor layer having a bottom surface connected to a top surface of the third P-type semiconductor; and

a third PN-junction formed between the third P-type semiconductor layer and the third N-type semiconductor layer, wherein the third P-type semiconductor layer is connected to the first P-type semiconductor layer and to the second P-type semiconductor layer of the first inner anchor.

22. The micro-electro mechanical apparatus according to claim 18, wherein the second P-type semiconductor layer is disposed on the bottom surface and a lateral surface of the second N-type semiconductor layer.

23. The micro-electro mechanical apparatus according to claim 17, further comprising:

a second anchor, being disposed in the frame, including;

a second trench dividing the second anchor into a second inner anchor and a second outer anchor which are electrically insulated from each other;

a second electrical insulation layer disposed on the second inner anchor, the second outer anchor and the second trench;

a second conductive layer disposed on the second electrical insulation layer; and

a conductive post penetrating the second electrical insulation layer of the second inner anchor, wherein the conductive post connects the second conductive layer of the second inner anchor and the second inner anchor.

24. A micro-electro mechanical apparatus, being adapted to detecting a magnetic force and an acceleration, comprising:

a substrate comprising an electrode disposed on a top surface of the substrate;

a movable mass, being disposed above the electrode and configured to rotate about an axis, including;

a first P-type semiconductor layer having a bottom surface facing the electrode;

a first N-type semiconductor layer having a bottom surface connected to a top surface of the first P-type semiconductor layer; and

a first PN-junction formed between the first P-type semiconductor layer and the first N-type semiconductor layer;

a first electrical insulation layer disposed on a top surface of the first N-type semiconductor layer;

a first conductive layer disposed on the first electrical insulation layer; and

a controlling and switching unit configured to control the electrical current supply for the first conductive layer.

25. The micro-electro mechanical apparatus according to claim 24, further comprising a first anchor including:

a second P-type semiconductor layer having a bottom surface facing the electrode;

a second N-type semiconductor layer having a bottom surface connected to a top surface of the second P-type semiconductor layer; and

a second PN-junction formed between the second P-type semiconductor layer and the second N-type semiconductor layer.

26. The micro-electro mechanical apparatus according to claim 25, further comprising a first spring, being connected to the movable mass along a direction parallel to the axis, including:

a third P-type semiconductor layer;

a third N-type semiconductor layer having a bottom surface connected to a top surface of the third P-type semiconductor layer; and

a third PN-junction formed between the third P-type semiconductor layer and the third N-type semiconductor layer, wherein the third P-type semiconductor layer is connected to the first P-type semiconductor layer and to the second P-type semiconductor layer.

27. The micro-electro mechanical apparatus according to claim 26, further comprising a second spring including third N-type semiconductor layer, wherein the movable mass is a frame configured to rotate about the axis, the second spring is disposed in the frame and connected to the movable mass, the second spring and the first spring are arranged along a straight line which is parallel to the axis.

28. The micro-electro mechanical apparatus according to claim 27, further comprising a second anchor, being disposed in the frame, including:

a second N-type semiconductor layer;

a second trench dividing the second anchor into a second inner anchor and a second outer anchor which are electrically insulated from each other, wherein the third N-type semiconductor layer of the second spring is connected to the second N-type semiconductor layer of the second outer anchor and the first N-type semiconductor layer of the movable mass;

a second electrical insulation layer disposed on the second inner anchor, the second outer anchor and the second trench;

a second conductive layer disposed on the second electrical insulation layer; and

a conductive post penetrating the second electrical insulation layer of the second anchor, wherein the conductive post connects the second conductive layer of the second anchor and the second inner anchor.

29. The micro-electro mechanical apparatus according to claim 24, wherein the first P-type semiconductor layer is electrically coupled to a first polarization voltage, the first N-type semiconductor layer is electrically coupled to a second polarization voltage, the second polarization voltage is greater than or equal to the first polarization voltage, the first conductive layer further comprises a first end and a second end, the first end is electrically coupled to a ground, the second end is electrically coupled to the alternating current power source, and the electrode is electrically coupled to the ground.

30. The micro-electro mechanical apparatus according to claim 24, further comprising a first readout circuit electrically coupled to the electrode, wherein the first readout circuit receives a first input signal from the electrode and generates a first output signal when the controlling and switching unit allows an electrical current being not inputted into the first conductive layer.

31. The micro-electro mechanical apparatus according to claim 24, further comprising a second readout circuit electrically coupled to the electrode, wherein the second readout circuit receives a second input signal from the electrode and generates a second output signal when the controlling and switching unit allows an electrical current being inputted into the first conductive layer.

32. The micro-electro mechanical apparatus according to claim 24, further comprising a first readout circuit and a second readout circuit electrically which are coupled to the electrode respectively, wherein the first readout circuit receives a first input signal from the electrode and generates a first output signal when the controlling and switching unit allows an electrical current being not inputted into the first conductive layer, and the second readout circuit receives a second input signal from the electrode and generates a second output signal when the controlling and switching unit allows an electrical current being inputted into the first conductive layer.

33. The micro-electro mechanical apparatus according to claim 32, further comprising a computing and compensating processor electrically coupled to the first readout circuit and the second readout circuit, wherein the computing and compensating processor is used to calculate a difference between the second output signal and the first output signal.