Apparatus integrating microelectromechanical system device with circuit chip and methods for fabricating the same
First Claim
1. A method for fabricating an apparatus integrating a microelectromechanical system device with a circuit chip, comprising:
- providing an SOI (Silicon on Insulator) wafer, wherein the SOI wafer comprises a device layer, an insulating layer and a handle layer stacked in order;
etching from the device layer through the insulating layer so as to form a plurality of ring grooves and a plurality of pillars disposed at the center of the ring grooves;
forming a plurality of first holes at the center of each of the pillars, wherein the first holes penetrate the insulating layer and are filled with the conductive material;
etching the surface of the device layer so as to form a bottom of sealing ring, a plurality of bottoms of a plurality of supporting bases and a plurality of bottoms of a plurality of bases;
etching the device layer to the insulating layer so as to form an etched pattern;
integrating the above-mentioned device layer having etched pattern with a circuit chip, wherein the bottom of the sealing ring, the bottoms of the bases and the bottoms of the supporting bases are connected to a plurality of metal bonding areas of the circuit chip;
forming a plurality of second holes on the handle layer;
forming at least one sensing element, a plurality of springs, a sealing ring, the at least one bases and the at least one supporting bases; and
covering an isolation layer on a surface of the handle layer so as to form a hermetic chamber surrounding the at least one sensing element and an active surface of the circuit chip.
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Accused Products
Abstract
One embodiment discloses an apparatus integrating a microelectromechanical system device with a circuit chip which includes a circuit chip, a microelectromechanical system device, a sealing ring, and a lid. The circuit chip comprises a substrate and a plurality of metal bonding areas. The substrate has an active surface with electrical circuit area, and the metal bonding areas are disposed on the active surface and electrically connected to the electrical circuits. The microelectromechanical system device comprises a plurality of bases and at least one sensing element. The bases are connected to at least one of the metal bonding areas. The at least one sensing element is elastically connected to the bases. The sealing ring surrounds the bases, and is connected to at least one of the metal bonding areas. The lid is opposite to the active surface of the circuit chip, and is connected to the sealing ring to have a hermetic chamber which seals the sensing element and the active surface of the circuit chip.
24 Citations
27 Claims
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1. A method for fabricating an apparatus integrating a microelectromechanical system device with a circuit chip, comprising:
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providing an SOI (Silicon on Insulator) wafer, wherein the SOI wafer comprises a device layer, an insulating layer and a handle layer stacked in order; etching from the device layer through the insulating layer so as to form a plurality of ring grooves and a plurality of pillars disposed at the center of the ring grooves; forming a plurality of first holes at the center of each of the pillars, wherein the first holes penetrate the insulating layer and are filled with the conductive material; etching the surface of the device layer so as to form a bottom of sealing ring, a plurality of bottoms of a plurality of supporting bases and a plurality of bottoms of a plurality of bases; etching the device layer to the insulating layer so as to form an etched pattern; integrating the above-mentioned device layer having etched pattern with a circuit chip, wherein the bottom of the sealing ring, the bottoms of the bases and the bottoms of the supporting bases are connected to a plurality of metal bonding areas of the circuit chip; forming a plurality of second holes on the handle layer; forming at least one sensing element, a plurality of springs, a sealing ring, the at least one bases and the at least one supporting bases; and covering an isolation layer on a surface of the handle layer so as to form a hermetic chamber surrounding the at least one sensing element and an active surface of the circuit chip. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating an apparatus integrating a microelectromechanical system device with a circuit chip, comprising:
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providing an SOI (Silicon on Insulator) wafer, wherein the SOI wafer comprises a device layer, an insulating layer and a handle layer stacked in order; etching a surface of the device layer so as to form a bottom of a sealing ring, a plurality of bottoms of a plurality of supporting bases and a plurality of bottoms of a plurality of bases; etching the device layer to the insulating layer so as to form an etched pattern; integrating the above-mentioned device layer having etched pattern with a circuit chip, wherein the bottom of the sealing ring, the plurality of bottoms of the plurality of bases and the plurality of bottoms of the plurality of supporting bases are connected to a plurality of metal bonding areas of the circuit chip; forming a plurality of second holes on the handle layer; and forming at least one sensing element, the sealing ring, the plurality of supporting bases, the plurality of bases and a lid, wherein the step of forming the at least one sensing element, the sealing ring, the plurality of supporting bases, the plurality of bases and the lid is implemented after the step of integrating the above-mentioned device layer having etched pattern with the circuit chip. - View Dependent Claims (9, 10, 11, 12)
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13. A method for fabricating an apparatus integrating a microelectromechanical system device with a circuit chip, comprising:
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providing an SOI (Silicon on Insulator) wafer, wherein the SOI wafer comprises a device layer, an insulating layer and a handle layer stacked in order; etching from the device layer through the insulating layer so as to form a plurality of ring grooves and a plurality of pillars disposed at the center of the ring grooves; forming a first hole at the center of each of the plurality of pillars, wherein the first hole penetrates the insulating layer and is filled with a conductive material to form at least one conductive pillar; etching the device layer to the insulating layer so as to form an etched pattern; integrating the above-mentioned device layer having etched pattern with a circuit chip; forming a plurality of second holes on the handle layer; and forming at least one sensing element, a plurality of supporting bases, a sealing ring, and a lid wherein the sealing ring comprises a first silicon layer, the lid comprises an insulating layer, a second silicon layer and a plurality of the conductive pillars, wherein the first silicon layer and the second silicon layer clip the insulating layer, and the plurality of the conductive pillars penetrate the insulating layer and connect the first silicon layer and the second silicon layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification