Nanochannel electrode devices

• US 9,228,994 B1
• Filed: 08/06/2014
• Issued: 01/05/2016
• Est. Priority Date: 08/06/2014
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Cheng, Kangguo, Ervin, Joseph, Li, Juntao, Pei, Chengwen, Wang, Geng
• Primary Examiner(s): Pham, Long
• Application Number:
  US14/452,741
• Time in Patent Office: 517 Days
• US Class Current: 1/1
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 33/48721 Investigating individual macromolecules, e.g. by translocation through nanopores Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68
• CPC Class Codes: H01L 21/845 including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/1211 combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/413 Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires nanosized carbon materials, e.g. carbon nanotubes, per se C01B32/15; transparent electrodes comprising carbon nano-tubes H10K30/821, nanotechnology per se B82B

Abstract

A nanoscale electrode device can be fabricated by forming a pair of semiconductor fins laterally spaced from each other by a uniform distance and formed on a substrate. The pair of semiconductor fins can function as a pair of electrodes that can be biased to detect the leakage current through a nanoscale string to pass therebetween. A nanochannel having a uniform separation distance is formed between the pair of semiconductor fins. The nanochannel may be defined by a gap between a pair of raised active regions formed on the pair of semiconductor fins, or between proximal sidewalls of the pair of semiconductor fins. An opening is formed through the portion of the substrate underlying the region of the nanochannel to enable passing of a nanoscale string.

Claims

1. A structure comprising:

a pair of parallel electrodes located on a substrate, wherein each of said pair of parallel electrodes comprises at least a semiconductor fin, and a nanochannel is present between said pair of parallel electrodes;

a metal interconnect structure-containing layer comprising conductive structures embedded in at least one dielectric material layer, each of said conductive structures is electrically shorted to one of said pair of parallel electrodes; and

a contiguous cavity passing through said substrate and said at least one dielectric material layer, said contiguous cavity comprising said nanochannel.

2. The structure of claim 1, further comprising a medium located within said contiguous cavity.

3. The structure of claim 2, further comprising a first external electrode and a second external electrode located on said medium and electrically biased to induce flow of electrically charged material through said nanochannel.

4. The structure of claim 3, further comprising a leakage current measurement circuitry configured to measure a leakage current through said pair of parallel electrodes and a portion of said electrically charged material within said nanochannel.

5. The structure of claim 1, wherein said nanochannel has a rectangular periphery having a width in a range from 0.5 nm to 100 nm, and a length L that is greater than said width, said width is perpendicular to a lengthwise direction of said semiconductor fins and said length is parallel to said lengthwise direction.

6. The structure of claim 1, wherein each of said pair of parallel electrodes further comprises a raised active region comprising a doped semiconductor material, and said nanochannel comprises a periphery including edges of said raised active regions.

7. The structure of claim 6, wherein said periphery further comprises a portion of a sidewall of a dielectric material layer located within said metal interconnect structure-containing layer, said sidewall is a surface defining a lateral extent of said contiguous cavity.

8. The structure of claim 6, further comprising:

an additional semiconductor fin located on said substrate; and

a raised inactive region located on said additional semiconductor fin, said inactive region including an intrinsic semiconductor material.

9. The structure of claim 1, further comprising at least one gate structure straddling said pair of parallel electrodes, wherein a periphery of said nanochannel includes an edge of one of said at least one gate structure.

10. The structure of claim 1, wherein sidewalls of said contiguous cavity vertically extend from a topmost surface of said contiguous cavity to a surface selected from a horizontal surface of said substrate and a surface of said pair of parallel electrodes.