Rule generating apparatus and method using lithography simulation

• US 9,230,053 B2
• Filed: 11/05/2014
• Issued: 01/05/2016
• Est. Priority Date: 02/12/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Hyun-Jong, Park, Chul-Hong, Choi, Roo-Li, Hur, Duck-Hyung
• Primary Examiner(s): Levin, Naum B
• Application Number:
  US14/533,553
• Publication Number:
  US 20150227673A1
• Time in Patent Office: 426 Days
• US Class Current: 1/1
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36
• CPC Class Codes: H01L 21/027 Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 photographic masks or originals per se G03F1/00; registration or positioning of photographic masks or originals G03F9/00; photographic cameras G03B; control of position G05D3/00

Abstract

A design rule generating method is provided. The method includes receiving a test pattern, providing a plurality of workflows, which correspond to the test pattern and are preset in relation to a lithography model and a mask generation method, and performing simulation on the test pattern according to a workflow selected from the workflows.

Claims

1. A design rule generating method comprising:

receiving a test pattern;

providing a plurality of workflows which correspond to the test pattern and are preset in relation to a lithography model and a mask generation method; and

performing, using a special purpose computer, a simulation on the test pattern according to a workflow selected from the workflows.

2. The method of claim 1, wherein the preset workflows are based on whether a usable lithography model exists.

3. The method of claim 2, wherein the preset workflows are based on whether a new lithography model is to be generated.

4. The method of claim 1, wherein the lithography model comprises at least one of an optical model, a resist model, a process window model, and a defocus model.

5. The method of claim 1, wherein the preset workflows are based on whether ideal mask generation (IMG) or optical proximity correction (OPC) is to be used to change the mask to correct an optical proximity effect.

6. The method of claim 1, wherein the preset workflows are based on whether source mask optimization (SMO) is to be performed.

7. The method of claim 1, wherein the providing of the workflows comprises displaying the workflows simultaneously for selection.

8. The method of claim 1, wherein the providing of the workflows comprises

displaying a first query about whether to perform source mask optimization (SMO),

displaying a second query about whether a usable lithography model exists after the first query,

displaying a third query about whether to generate a new lithography model after the second query, and

displaying a fourth query about whether to use ideal mask generation (IMG) or optical proximity correction (OPC) to change the mask to correct an optical proximity effect after the third query.

9. The method of claim 1, further comprising analyzing results of the simulation and extracting a design rule responsive to analyzing the results.

10. The method of claim 9, further comprising receiving reference values of one or more parameters which are used to analyze the results of the simulation before the providing of the workflows.

11. A design rule generating method comprising:

receiving a test pattern;

providing a plurality of workflows, which correspond to the test pattern and are preset;

performing, using a special purpose computer, a simulation on the test pattern according to one of the workflows selected from the workflows;

analyzing results of the simulation; and

extracting a design rule responsive to analyzing the results,

wherein the workflows are determined based on at least one of whether source mask optimization (SMO) is to be performed, whether a usable lithography model exists, whether a new lithography model is to be generated, and a type of a mask generation method.

12. The method of claim 11, wherein the lithography model comprises at least one of an optical model, a resist model, a process window model, and a defocus model.

13. The method of claim 11, wherein the type of the mask generation method comprises at least one of ideal mask generation (IMG) and optical proximity correction (OPC) to change the mask to correct an optical proximity effect.

14. The method of claim 11, wherein the performing of the simulation, the analyzing of the results of the simulation, and the extracting of the design rule are performed as successive operations within one system.

15. A method, comprising:

simulating, using a special purpose computer, a test pattern associated with a semiconductor device according to a workflow; and

extracting a design rule based on simulating the test pattern;

wherein simulating the test pattern and extracting the design rule are performed on a common processing apparatus.

16. The method of claim 15, wherein the workflow is selected from a plurality of workflows.

17. The method of claim 15, further comprising:

providing a plurality of queries;

receiving responses to the plurality of queries; and

selecting the workflow based on the responses to the plurality of queries.

18. The method of claim 15, further comprising:

displaying results of simulating the test pattern in a table format.

19. The method of claim 18, wherein the table format comprises a measure position of the test pattern section;

a design rule value of the test pattern section, and a simulation result value section.

20. The method of claim 15, wherein extracting the design rule comprises extracting the design rule according to a defined value range.