Multiple readers for high resolution and SNR for high areal density application

• US 9,230,578 B2
• Filed: 12/23/2013
• Issued: 01/05/2016
• Est. Priority Date: 12/23/2013
• Status: Active Grant

• Current Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Original Assignee: HGST Netherlands B.V. (Western Digital Corporation)
• Inventors: Batra, Sharat, Coker, Jonathan D., Oenning, Travis R.
• Primary Examiner(s): Klimowicz, Will J
• Application Number:
  US14/138,804
• Publication Number:
  US 20150179193A1
• Time in Patent Office: 743 Days
• Field of Search: 360314-316, 360/319, 360324-3422
• US Class Current: 1/1
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11B 5/3954 the active elements transducing on a single track

Abstract

The present invention generally relates to a read head in a magnetic recording head. The read head utilizes two reader elements that are stacked in the down track direction within the same read gap to improve resolution and SNR by combining the signals from the two reader elements. The output waveform from each read element is asymmetric in the down track direction; however, by use of equalizer settings and waveform combining the algorithm in signal processing, the combined waveform has a similar or better resolution and higher SNR compared to a single read element in a smaller read gap.

Claims

1. A magnetic read head, comprising:

a first shield layer;

a second shield layer, wherein the second shield layer comprises a ferromagnetic material;

a first sensor element disposed between the first shield layer and the second shield layer;

a second sensor element, separate and distinct from the first sensor element, disposed between the first shield layer and the second shield layer;

an insulating layer disposed on the first shield layer and on sidewalls of the first and second sensor elements; and

a magnetic bias layer disposed on and in contact with the insulating layer, wherein the magnetic bias layer is in contact with the ferromagnetic material of the second shield layer.

2. The magnetic read head of claim 1, wherein the first sensor element comprises:

a first free magnetic layer;

a first oxide barrier layer disposed on the first free magnetic layer;

a first magnetic reference layer disposed on the first oxide barrier layer;

a first nonmagnetic layer disposed on the first magnetic reference layer;

a first pinned magnetic layer disposed on the first nonmagnetic layer; and

a first antiferromagnetic layer disposed on the first pinned magnetic layer.

3. The magnetic read head of claim 2, wherein the first oxide barrier layer comprises MgO, HfO₂, TiO₂ or Al₂O₃.

4. The magnetic read head of claim 3, wherein the first magnetic reference layer comprises NiFe, CoFe, or CoFeB.

5. The magnetic read head of claim 4, wherein the first nonmagnetic layer comprises ruthenium.

6. The magnetic read head of claim 5, wherein the first free magnetic layer comprises NiFe, CoFe, or CoFeB.

7. The magnetic read head of claim 6, wherein the first antiferromagnetic layer comprises PtMn, IrMn, PtPdMn, NiMn or combinations thereof.

8. The magnetic read head of claim 7, wherein the second sensor element comprises:

a second antiferromagnetic layer;

a second pinned magnetic layer disposed on the second antiferromagnetic layer;

a second nonmagnetic layer disposed on the second pinned magnetic layer;

a second magnetic reference layer disposed on the second nonmagnetic layer;

a second oxide barrier layer disposed on the second magnetic reference layer; and

a second free magnetic layer disposed on the second oxide barrier layer.

9. The magnetic read head of claim 8, wherein the second oxide barrier layer comprises MgO, HfO₂, TiO₂ or Al₂O₃.

10. The magnetic read head of claim 9, wherein the second magnetic reference layer comprises NiFe, CoFe, or CoFeB.

11. The magnetic read head of claim 10, wherein the second nonmagnetic layer comprises ruthenium.

12. The magnetic read head of claim 11, wherein the second free magnetic layer comprises NiFe, CoFe, or CoFeB.

13. The magnetic read head of claim 12, wherein the second antiferromagnetic layer comprises PtMn, IrMn, PtPdMn, NiMn or combinations thereof.

14. The magnetic read head of claim 8, wherein the first antiferromagnetic layer and the second antiferromagnetic layer comprise different materials.

15. A magnetic read head, comprising:

a first shield layer;

a first sensor element disposed on the first shield layer;

a center lead disposed on the first sensor element;

a second sensor element disposed on the center lead; and

a second shield layer disposed on the second sensor element, wherein the first sensor element comprises;

a seed layer disposed on the first shield layer;

a first free magnetic layer disposed on the seed layer;

a first oxide barrier layer disposed on the first free magnetic layer, wherein the first oxide barrier layer comprises MgO, HfO₂, TiO₂ or Al₂O₃;

a first magnetic reference layer disposed on the first oxide barrier layer, wherein the first magnetic reference layer comprises NiFe, CoFe, or CoFeB;

a first nonmagnetic layer disposed on the first magnetic reference layer, wherein the first nonmagnetic layer comprises ruthenium;

a first pinned magnetic layer disposed on the first nonmagnetic layer, wherein the first free magnetic layer comprises NiFe, CoFe, or CoFeB; and

a first antiferromagnetic layer disposed on the first pinned magnetic layer, wherein the first antiferromagnetic layer comprises PtMn, IrMn, PtPdMn, NiMn or combinations thereof.

16. The magnetic read head of claim 15, wherein the second sensor element comprises:

a second antiferromagnetic layer, wherein the second antiferromagnetic layer comprises PtMn, IrMn, PtPdMn, NiMn or combinations thereof;

a second pinned magnetic layer disposed on the second antiferromagnetic layer, wherein the second pinned magnetic layer comprises NiFe, CoFe, or CoFeB;

a second nonmagnetic layer disposed on the second pinned magnetic layer, wherein the second nonmagnetic layer comprises ruthenium;

a second magnetic reference layer disposed on the second nonmagnetic layer, wherein the second magnetic reference layer comprises NiFe, CoFe, or CoFeB; and

a second oxide barrier layer disposed on the second magnetic reference layer, wherein the second oxide barrier layer comprises MgO, HfO₂, TiO₂ or Al₂O₃; and

a second free magnetic layer disposed on the second oxide barrier layer.

17. The magnetic read head of claim 16, wherein the center lead comprises a nonmagnetic conductive material comprising copper, chromium, tantalum or tungsten.

18. The magnetic read head of claim 15, wherein the center lead is magnetic.

19. A magnetic read head, comprising:

a first shield layer;

a first sensor element disposed on the first shield layer, wherein the first sensor element comprises;

an underlaver disposed on and in contact with the first shield layer;

a first free magnetic layer disposed on and in contact with the underlayer, wherein the first free magnetic layer is disposed a first distance from the first shield layer;

a first oxide barrier layer disposed on and in contact with the first free magnetic layer wherein the first oxide barrier layer comprises MgO, HfO₂, TiO₂ or Al₂O₃;

a first magnetic reference layer disposed on and in contact with the first oxide layer, wherein the first magnetic reference layer comprises NiFe, CoFe, or CoFeB;

a first nonmagnetic layer disposed on and in contact with the first magnetic reference layer, wherein the first nonmagnetic layer comprises ruthenium;

a first pinned magnetic layer disposed on and in contact with the first nonmagnetic layer; and

a first antiferromagnetic layer disposed on and in contact with the first pinned magnetic layer, wherein the first antiferromagnetic layer comprises PtMn, IrMn, PtPdMn, NiMn or combinations thereof;

a second shield layer disposed over the first sensor element; and

a second sensor element disposed between the first sensor element and the second shield layer, the second sensor element having a second free layer, wherein the second free layer is disposed a second distance from the second shield layer and wherein the second distance is substantially equal to the first distance, and wherein the second sensor element comprises;

a second antiferromagnetic layer disposed on a seed layer, wherein the second antiferromagnetic layer comprises PtMn, IrMn, PtPdMn, NiMn or combinations thereof;

a second pinned magnetic layer disposed on the second antiferromagnetic layer;

a second nonmagnetic layer disposed on the second pinned magnetic layer, wherein the second nonmagnetic layer comprises ruthenium;

a second magnetic reference layer disposed on the second nonmagnetic layer, wherein the second magnetic reference layer comprises NiFe, CoFe, or CoFeB;

a second oxide barrier layer disposed on the second magnetic reference layer, wherein the second oxide barrier layer comprises MgO, HfO₂, TiO₂ or Al₂O₃; and

the second free magnetic layer disposed on the second oxide barrier layer.