Dielectric and/or capacitor formation

• US 9,230,797 B2
• Filed: 05/26/2011
• Issued: 01/05/2016
• Est. Priority Date: 05/26/2011
• Status: Expired due to Fees

• Current Assignee: Empire Technology Development LLC (Allied Inventors Management, LLC)
• Original Assignee: Empire Technology Development LLC (Allied Inventors Management, LLC)
• Inventors: Rothfuss, Chris, Chen, Sung-Wei
• Primary Examiner(s): Bareford, Katherine A
• Assistant Examiner(s): McClure, Christina
• Application Number:
  US13/391,038
• Publication Number:
  US 20120301735A1
• Time in Patent Office: 1,685 Days
• Field of Search: 427/130, 427/79
• US Class Current: 1/1
• CPC Class Codes: H01G 4/1272 Semiconductive ceramic capacitors
• CPC Class Codes: H01G 4/304 obtained from a another capacitor
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02244 of a metallic layer
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/60 Electrodes

Abstract

Technologies are generally described for a component, a method to form a component and/or a system configured to form a component. In an example, the method to form a component may include placing a first layer including a conductive material on a support. The method may include placing a second layer, including the conductive material and oxygen, on the first layer. The method may include placing a third layer, including tellurium and oxygen, on the second layer. The method may include placing a fourth layer, including tin and tellurium, on the third layer. In an example, placing of the fourth layer on the third layer may include placing a fifth layer including tellurium on the fourth layer, placing a sixth layer including tin on the fifth layer, placing a seventh layer including tellurium on the sixth layer and annealing the fifth, sixth, and seventh layers to form the fourth layer.

Claims

1. A method of forming a capacitor, the method comprising:

placing a first layer on a support, wherein the first layer includes aluminum;

oxidizing at least a part of the first layer to form a second layer on the first layer, the second layer including Al₂O₃;

placing a third layer on the second layer, the third layer includes tellurium and oxygen;

and placing a fourth layer on the third layer, wherein the fourth layer includes tin and tellurium to form the capacitor.

2. The method as recited in claim 1, wherein:

the third layer includes at least one of Te₂O₅, TeO₂ or TeO₃; and

the fourth layer includes SnTe.

3. The method as recited in claim 1, wherein:

the third layer includes Te₂O₅ with a thickness of about 5 nm; and

the fourth layer includes SnTe with a thickness of about 20 nm.

4. The method as recited in claim 1, wherein:

the third layer includes Te₂O₅ with a thickness in a range from about 1 nm to about 10 nm; and

the fourth layer includes SnTe with a thickness in a range of about 1 nm to about 50 nm.

5. The method as recited in claim 1, wherein placing the fourth layer on the third layer comprises:

placing a fifth layer including tellurium on the third layer;

placing a sixth layer including tin on the fifth layer;

placing a seventh layer including tellurium on the sixth layer; and

annealing the fifth, sixth, and seventh layers to form the fourth layer.

6. The method as recited in claim 1, wherein placing the fourth layer on the third layer comprises:

placing a fifth layer including tellurium on the third layer, wherein the fifth layer has a thickness in a range from about 5 nm to about 7 nm;

placing a sixth layer including tin on the fifth layer, wherein the sixth layer has a thickness in a range of about 7 nm to about 9 nm;

placing a seventh layer including tellurium on the sixth layer, wherein the seventh layer has a thickness in a range from about 5 nm to about 7 nm; and

annealing the fifth, sixth and seventh layers to form the fourth layer.

7. The method as recited in claim 1, further comprising:

placing a fifth layer on the fourth layer, wherein the fifth layer includes tellurium and oxygen; and

wherein placing the fourth layer on the third layer comprises;

placing a sixth layer including tellurium on the third layer;

placing a seventh layer including tin on the sixth layer;

placing an eighth layer including tellurium on the seventh layer; and

annealing the sixth, seventh and eighth layers to form the fourth layer.

8. The method as recited in claim 1, wherein the support is a first support and the method further comprises:

placing a fifth layer on the fourth layer, wherein the fifth layer includes tellurium and oxygen;

wherein placing the fourth layer on the third layer comprises;

placing a sixth layer including tellurium on the third layer;

placing a seventh layer including tin on the sixth layer;

placing an eighth layer including tellurium on the seventh layer;

annealing the sixth, seventh, and eighth layers to form the fourth layer; and

the method further comprises;

placing a ninth layer including a second conductive material on a second support;

placing a tenth layer including the second conductive material and oxygen on the ninth layer;

placing an eleventh layer on the tenth layer, wherein the eleventh layer includes tellurium and oxygen;

placing a twelfth layer on the eleventh layer, wherein the twelfth layer includes tin and tellurium;

placing a thirteenth layer on the twelfth layer, wherein the thirteenth layer includes tellurium and oxygen;

wherein placing the twelfth layer on the eleventh layer comprises;

placing a fourteenth layer including tellurium on the eleventh layer;

placing a fifteenth layer including tin on the fourteenth layer;

placing a sixteenth layer including tellurium on the fifteenth layer;

annealing the fourteenth, fifteenth, and sixteenth layers to form the twelfth layer; and

the method further comprises placing the thirteenth layer on the fifth layer.

9. A method of forming a component, the method comprising:

forming a first electrode on a support;

forming a dielectric structure on the first electrode; and

forming a second electrode on the dielectric structure to form the component, wherein the component is a capacitor, and forming the dielectric structure further comprises;

forming a first layer comprising tellurium and oxygen, wherein the first layer is formed on the first electrode; and

forming a second layer comprising tellurium and tin, wherein the second layer is formed on the first layer.

10. The method of claim 9, wherein forming the first layer comprising tellurium and oxygen comprises forming the first layer comprising at least one of Te₂O₅, TeO₂ or TeO₃.

11. The method of claim 9, wherein forming the second layer comprising tellurium and tin comprises forming the second layer comprising SnTe.

12. The method of claim 9, wherein the first electrode comprises aluminum, the method further comprising oxidizing the aluminum to form an Al₂O₃ layer on the first electrode, wherein the first layer is formed on the Al₂O₃ layer.

13. A method of forming a component, the method comprising:

forming a first electrode on a support;

forming a dielectric structure on the first electrode; and

forming a second electrode on the dielectric structure to form the component, wherein the component is a capacitor, and forming the dielectric structure further comprises;

forming a first layer comprising tellurium and oxygen, wherein the first layer comprises at least one of Te₂O₅, TeO₂ or TeO₃; and

forming a second layer comprising tellurium and tin, wherein the second layer comprises SnTe.

14. The method of claim 13, further comprising:

forming a first plurality of layers, each layer of the first plurality of layers comprising at least one of Te₂O₅, TeO₂ or TeO₃, the first plurality of layers including the first layer; and

forming a second plurality of layers, each layer of the second plurality of layers comprising SnTe, the second plurality of layers including the second layer, wherein each layer of the second plurality of layers is located between a pair of layers of the first plurality of layers.

15. A method of forming a capacitor, the method comprising:

placing a first electrode on a support;

placing a first layer on the first electrode, wherein the first layer includes tellurium and oxygen;

placing a second layer on the first layer wherein the second layer includes tin and tellurium; and

placing a second electrode on the second layer to form the capacitor.

16. The method as recited in claim 15, wherein:

the first layer includes at least one of Te₂O₅, TeO₂ or TeO₃; and

the second layer includes SnTe.