×

High dielectric constant etch stop layer for a memory structure

  • US 9,230,979 B1
  • Filed: 10/31/2014
  • Issued: 01/05/2016
  • Est. Priority Date: 10/31/2014
  • Status: Active Grant
First Claim
Patent Images

1. A monolithic three-dimensional memory device, comprising:

  • a high dielectric constant (high-k) dielectric material layer having a dielectric constant greater than 7.9 and located over a substrate;

    a stack of alternating layers comprising insulator layers and electrically conductive layers and located over the high-k dielectric material layer;

    a memory opening extending through the stack; and

    a memory film and a semiconductor channel located within the memory opening, wherein;

    the memory film is in contact with a top surface of the high-k dielectric material layer; and

    a portion of the semiconductor channel extends through an opening in the high-k dielectric material layer and contacts a semiconductor material within the substrate.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×