Light-emitting device

• US 9,231,042 B2
• Filed: 02/04/2014
• Issued: 01/05/2016
• Est. Priority Date: 02/12/2013
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nishido, Yusuke, Hirakata, Yoshiharu, Yamanaka, Shigetsugu
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): TYNES JR., LAWRENCE C
• Application Number:
  US14/172,131
• Publication Number:
  US 20140225140A1
• Time in Patent Office: 700 Days
• Field of Search: 257/98, 257/99
• US Class Current: 1/1
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/805 Electrodes

Abstract

Occurrence of a crosstalk phenomenon in a light-emitting device is inhibited. A light-emitting device including an insulating layer 416; a first lower electrode 421a formed over the insulating layer; a second lower electrode 421b formed over the insulating layer; a partition 418 formed over the insulating layer and positioned between the first lower electrode and the second lower electrode; a stacked-layer film 423 which is formed over the first lower electrode, the partition, and the second lower electrode and includes a light-emitting layer containing a light-emitting substance and a layer having higher conductivity than that of the light-emitting layer; an upper electrode 422 formed over the stacked-layer film; and a shield electrode 419 which is formed under the partition and does not overlap with the first lower electrode and the second lower electrode.

Claims

1. A light-emitting device comprising:

a plurality of sub-pixels;

an insulating layer;

a first lower electrode over the insulating layer in one of the plurality of sub-pixels;

a second lower electrode over the insulating layer in another one of the plurality of sub-pixels;

a partition over the insulating layer, the partition positioned between the first lower electrode and the second lower electrode;

a stacked-layer film over the first lower electrode, the partition, and the second lower electrode, the stacked-layer film comprising a light-emitting layer containing a light-emitting substance and a layer having higher conductivity than a conductivity of the light-emitting layer;

an upper electrode over the stacked-layer film; and

a third electrode under the partition, and between the first lower electrode and the second lower electrode,

wherein a length in a longitudinal direction of the third electrode is longer than a length in a longitudinal direction of any of the plurality of sub-pixels.

2. The light-emitting device according to claim 1,

wherein the third electrode spaces the first lower electrode from the second lower electrode.

3. The light-emitting device according to claim 1,

wherein the third electrode is over the insulating layer.

4. The light-emitting device according to claim 3,

wherein the third electrode is in the same layer as the first lower electrode.

5. The light-emitting device according to claim 3, further comprising:

an optical adjustment layer between the first lower electrode and the stacked-layer film,

wherein the third electrode is a stack comprising a layer in the same layer as the first lower electrode and a layer in the same layer as the optical adjustment layer.

6. The light-emitting device according to claim 1,

wherein the third electrode is under the insulating layer.

7. The light-emitting device according to claim 6, further comprising:

a transistor under the insulating layer,

wherein the transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and

wherein the third electrode is in the same layer as the source electrode.

8. The light-emitting device according to claim 6, further comprising:

a transistor under the insulating layer,

wherein the transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and

wherein the third electrode is in the same layer as the gate electrode.

9. The light-emitting device according to claim 1,

wherein the third electrode is in an electrically floating state.

10. The light-emitting device according to claim 1,

wherein the third electrode is configured to be supplied with a potential which is lower than a first potential that is applied to one of the first lower electrode and the upper electrode, and

wherein the first potential is higher than a second potential that is applied to the other of the first lower electrode and the upper electrode when light is emitted by applying a potential difference between the first potential and the second potential between the first lower electrode and the upper electrode.

11. The light-emitting device according to claim 10,

wherein the third electrode is configured to be supplied with a potential which is lower than or equal to a sum of a threshold voltage of light emission and the second potential.

12. The light-emitting device according to claim 1, further comprising:

a first color filter over the upper electrode, the first color filter having a first color and overlapping with the first lower electrode; and

a second color filter over the upper electrode, the second color filter having a second color and overlapping with the second lower electrode.

13. A light-emitting device comprising:

an insulating layer;

a plurality of lower electrodes over the insulating layer;

a partition over the insulating layer, the partition positioned between the plurality of lower electrodes and surrounding each of the plurality of lower electrodes;

a stacked-layer film over the plurality of lower electrodes and the partition, the stacked-layer film comprising a light-emitting layer containing a light-emitting substance and a layer having higher conductivity than a conductivity of the light-emitting layer;

an upper electrode over the stacked-layer film; and

a third electrode under the partition, and between the plurality of lower electrodes and surrounding each of the plurality of lower electrodes.

14. The light-emitting device according to claim 13,

wherein the third electrode spaces each of the plurality of lower electrodes.

15. The light-emitting device according to claim 13,

wherein the third electrode is over the insulating layer.

16. The light-emitting device according to claim 15,

wherein the third electrode is in the same layer as the plurality of lower electrodes.

17. The light-emitting device according to claim 15, further comprising:

an optical adjustment layer between the plurality of lower electrodes and the stacked-layer film,

wherein the third electrode is a stack comprising a layer in the same layer as the plurality of lower electrodes and a layer in the same layer as the optical adjustment layer.

18. The light-emitting device according to claim 13,

wherein the third electrode is under the insulating layer.

19. The light-emitting device according to claim 18, further comprising:

a transistor under the insulating layer,

wherein the transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and

wherein the third electrode is in the same layer as the source electrode.

20. The light-emitting device according to claim 18, further comprising:

a transistor under the insulating layer,

wherein the transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and

wherein the third electrode is in the same layer as the gate electrode.

21. The light-emitting device according to claim 13,

wherein the third electrode is in an electrically floating state.

22. The light-emitting device according to claim 13,

wherein the third electrode is configured to be supplied with a potential which is lower than a first potential that is applied to one of the lower electrode and the upper electrode, and

wherein the first potential is higher than a second potential that is applied to the other of the lower electrode and the upper electrode when light is emitted by applying a potential difference between the first potential and the second potential between the lower electrode and the upper electrode.

23. The light-emitting device according to claim 22,

wherein the third electrode is configured to be supplied with a potential which is lower than or equal to a sum of a threshold voltage of light-emission and the second potential.