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Double heterojunction group III-nitride structures

  • US 9,231,064 B1
  • Filed: 08/12/2014
  • Issued: 01/05/2016
  • Est. Priority Date: 08/12/2014
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a Group III-N channel layer;

    a Group III-N top-barrier polarization-generating layer forming a heterojunction with an upper surface of the channel layer;

    a Group III-N back-barrier polarization-generating layer forming a heterojunction with a lower surface of the channel layer;

    wherein the Group III-N channel layer has disposed therein a doped region having predetermined n-type conductive dopant; and

    wherein the doped region is a delta-doped region having a peak doping concentration a predetermined finite distance from the upper surface of the channel layer and a predetermined finite distance from the lower surface of the channel layer.

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