Semiconductor structure and manufacturing method of the same
First Claim
1. A semiconductor structure, comprising:
- an isolation layer formed on a substrate, wherein the isolation layer has a first gate trench and a second gate trench separated from the first gate trench;
a gate dielectric layer formed in the first gate trench and in the second gate trench;
a first work function metal formed on the gate dielectric layer in the first gate trench;
a first bottom barrier layer formed on the first work function metal;
a second work function metal formed on the first bottom barrier layer;
a first top barrier layer formed on the second work function metal;
a second bottom barrier layer formed on the gate dielectric layer in the second gate trench;
a third work function metal formed on the second bottom barrier layer, the third work function metal comprising the same material with that of the second work function metal; and
a second top barrier layer formed on the third work function metal;
wherein the second bottom barrier layer, the third work function metal, and the second top barrier layer cover the sidewalls of the second gate trench.
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Abstract
A semiconductor structure and a manufacturing method thereof are disclosed. The semiconductor structure includes an isolation layer, a gate dielectric layer, a first work function metal, a first bottom barrier layer, a second work function metal, and a first top barrier layer. The isolation layer is formed on a substrate and has a first gate trench. The gate dielectric layer is formed in the first gate trench. The first work function metal is formed on the gate dielectric layer in the first gate trench. The first bottom barrier layer is formed on the first work function metal. The second work function metal is formed on the first bottom barrier layer. The first top barrier layer is formed on the second work function metal.
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Citations
14 Claims
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1. A semiconductor structure, comprising:
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an isolation layer formed on a substrate, wherein the isolation layer has a first gate trench and a second gate trench separated from the first gate trench; a gate dielectric layer formed in the first gate trench and in the second gate trench; a first work function metal formed on the gate dielectric layer in the first gate trench; a first bottom barrier layer formed on the first work function metal; a second work function metal formed on the first bottom barrier layer; a first top barrier layer formed on the second work function metal; a second bottom barrier layer formed on the gate dielectric layer in the second gate trench; a third work function metal formed on the second bottom barrier layer, the third work function metal comprising the same material with that of the second work function metal; and a second top barrier layer formed on the third work function metal; wherein the second bottom barrier layer, the third work function metal, and the second top barrier layer cover the sidewalls of the second gate trench. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A manufacturing method of a semiconductor structure, comprising:
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forming an isolation layer on a substrate, comprising forming a first gate trench and a second gate trench in the isolation layer, the second gate trench being separated from the first gate trench; forming a gate dielectric layer in the first gate trench and in the second gate trench; forming a first work function metal on the gate dielectric layer in the first gate trench; forming a first bottom barrier layer on the first work function metal; forming a second work function metal on the first bottom barrier layer; forming a first top barrier layer on the second work function metal; forming a second bottom barrier layer on the gate dielectric layer in the second gate trench; forming a third work function metal on the second bottom barrier layer, the third work function metal having the same material with that of the second work function metal; and forming a second top barrier layer on the third work function metal; wherein the second bottom barrier layer, the third work function metal, and the second top barrier layer cover the sidewalls of the second gate trench. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification