Semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer;
performing a plasma treatment under an atmosphere containing Cl2 on the oxide semiconductor layer; and
performing an oxygen radical treatment on the oxide semiconductor layer.
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Accused Products
Abstract
It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.
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Citations
10 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer; performing a plasma treatment under an atmosphere containing Cl2 on the oxide semiconductor layer; and performing an oxygen radical treatment on the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; performing a plasma treatment under an atmosphere containing Cl2 on the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and performing an oxygen radical treatment on a first region of the oxide semiconductor layer which does not overlap the source electrode layer and the drain electrode layer. - View Dependent Claims (7, 8, 9, 10)
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Specification