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Semiconductor device and method for manufacturing the same

  • US 9,231,110 B2
  • Filed: 10/16/2014
  • Issued: 01/05/2016
  • Est. Priority Date: 11/07/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer;

    performing a plasma treatment under an atmosphere containing Cl2 on the oxide semiconductor layer; and

    performing an oxygen radical treatment on the oxide semiconductor layer.

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