Schottky diode
First Claim
Patent Images
1. A Schottky diode comprising:
- a drift layer having a first surface associated with an active region and an edge termination region substantially adjacent the active region, the active region being provided on a mesa in the drift layer and including a mesa guard ring;
a Schottky layer over the active region of the first surface to form a Schottky junction;
an array of junction barrier elements formed in the drift layer below the Schottky junction, wherein at least one junction barrier element of the array junction barrier elements forms a junction barrier junction with the drift layer; and
an edge termination structure formed in a bottom surface of the edge termination recess that is non-planar with the mesa guard ring.
2 Assignments
0 Petitions
Accused Products
Abstract
The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer.
278 Citations
21 Claims
-
1. A Schottky diode comprising:
-
a drift layer having a first surface associated with an active region and an edge termination region substantially adjacent the active region, the active region being provided on a mesa in the drift layer and including a mesa guard ring; a Schottky layer over the active region of the first surface to form a Schottky junction; an array of junction barrier elements formed in the drift layer below the Schottky junction, wherein at least one junction barrier element of the array junction barrier elements forms a junction barrier junction with the drift layer; and an edge termination structure formed in a bottom surface of the edge termination recess that is non-planar with the mesa guard ring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A Schottky diode comprising:
-
a drift layer having a first surface associated with an active region and an edge termination region substantially adjacent the active region, the active region being provided on a mesa in the drift layer and including a mesa guard ring; a Schottky layer over the active region of the first surface to form a Schottky junction; a first junction barrier element formed in the drift layer having a first size; a second junction barrier element formed in the drift layer having a second size different from the first size, wherein the first junction barrier element forms a first junction barrier junction with the drift layer and the second junction barrier element forms a second junction barrier junction with the drift layer; and an edge termination structure formed in a bottom surface of the edge termination recess that is non-planar with the mesa guard ring. - View Dependent Claims (19, 20)
-
-
21. A Schottky diode comprising:
-
a drift layer having a first surface associated with an active region and an edge termination region substantially adjacent the active region, the active region being provided on a mesa in the drift layer and including a mesa guard ring; a Schottky layer over the active region of the first surface to form a Schottky junction; and an array of junction barrier elements formed in the drift layer below the Schottky junction, wherein at least one junction barrier element of the array junction barrier elements forms a junction barrier junction with the drift layer, wherein during forward biased operation, the Schottky junctions are configured to turn on before the junction barrier junction.
-
Specification