Multi-bandpass, dual-polarization radome with compressed grid

• US 9,231,299 B2
• Filed: 10/25/2012
• Issued: 01/05/2016
• Est. Priority Date: 10/25/2012
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Jordan, Jared W., Cannon, Benjamin L.
• Primary Examiner(s): SMITH, GRAHAM P
• Application Number:
  US13/660,506
• Publication Number:
  US 20140118218A1
• Time in Patent Office: 1,167 Days
• Field of Search: 343/872
• US Class Current: 1/1
• CPC Class Codes: H01Q 1/425 comprising a metallic grid
• CPC Class Codes: H01Q 15/0026 said selective devices having a stacked geometry or having multiple layers
• CPC Class Codes: H01Q 15/0086 said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
• CPC Class Codes: H01Q 5/00 Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements combinations of separate active antenna units operating in different wavebands and connected to a common feeder system H01Q21/30

Abstract

A radome is provided and includes a dielectric wall and one or more inductive metallic grids embedded in and/or disposed on the dielectric wall. Each of the one or more grids includes compressed grid arms and is tuned to permit bandpass transmission at upper and lower frequencies.

Claims

1. A radome, comprising:

a dielectric wall; and

one or more inductive metallic grids embedded in and/or disposed on the dielectric wall,

each of the one or more grids includes compressed grid arms and is tuned to permit bandpass transmission at upper and lower frequencies,

wherein compression of the compressed grid arms extends along entire respective lengths thereof and each compressed grid arm comprises first and second ends that respectively follow oppositely damped sinusoidal patterns.

2. The radome according to claim 1, wherein a thickness of the dielectric wall is less than one half wavelength at the lower frequency.

3. The radome according to claim 1, wherein the grid is characterized with a grid spacing smaller than 40% of a free space wavelength at the upper frequency.

4. The radome according to claim 1, wherein the compressed grid arms are configured to achieve an inductive reactance necessary to cause bandpass transmission at the lower frequency.

5. The radome according to claim 1, wherein the compressed grid is tuned to permit bandpass transmission at the upper frequency while maintaining bandpass transmission at the lower frequency.

6. The radome according to claim 1, wherein the distributed self-capacitance of the compressed grid is utilized to control the inductive reactance of the metallic layer at the lower frequency.

7. A radome, comprising:

a dielectric wall; and

metallic layers embedded within and/or disposed on the dielectric wall,

each of the metallic layers includes an inductive metallic grid and compressed grid arms, and

each of the metallic layers is configured to act as a sub-resonant reactive impedance surface at a lower frequency and as a frequency selective surface at an upper frequency,

wherein compression of the compressed grid arms extends along entire respective lengths thereof and each compressed grid arm comprises first and second ends that respectively each comprise first and second ends that respectively follow oppositely damped sinusoidal patterns.

8. The radome according to claim 7, wherein the dielectric wall thickness is less than one half wavelength at the lower frequency.

9. The radome according to claim 7, wherein the grid is characterized with a grid spacing smaller than 40% of a free space wavelength at the upper frequency.

10. The radome according to claim 7, wherein the compressed grid arms are configured to achieve an inductive reactance necessary to cause bandpass transmission at the lower frequency.

11. The radome according to claim 7, wherein the compressed grid is tuned to permit bandpass transmission at the upper frequency while maintaining bandpass transmission at the lower frequency.

12. The radome according to claim 7, wherein the distributed self-capacitance of the compressed grid is utilized to control the inductive reactance of the metallic layer at the lower frequency.

13. A radome, comprising:

a dielectric wall having first and second portions;

first metallic layers embedded within and/or disposed on the first portion of the dielectric wall and including an inductive metallic grid defining grid apertures and a repeating lattice of metallic structures within the grid apertures;

second metallic layers embedded within and/or disposed on the second portion of the dielectric wall and including an inductive metallic grid including compressed grid arms;

the first and second metallic layers each being configured to act as a sub-resonant reactive impedance surface at a lower frequency and as a frequency selective surface at an upper frequency,

wherein compression of the compressed grid arms extends along entire respective lengths thereof and each compressed grid arm comprises first and second ends that respectively each comprise first and second ends that respectively follow oppositely damped sinusoidal patterns.

14. The radome according to claim 13, wherein the metallic structures are capacitively coupled with the corresponding grid to thereby achieve an inductive reactance necessary to cause bandpass transmission at the lower frequency.

15. The radome according to claim 13, wherein the metallic structures and the corresponding grid are tuned to permit bandpass transmission at the upper frequency while maintaining bandpass transmission at the lower frequency.

16. The radome according to claim 13, wherein the grid apertures of the grid corresponding to the first dielectric wall portion are rectangular and arranged in a repeating matrix, and the metallic structures comprise loop elements.

17. The radome according to claim 13, wherein the compressed grid arms are configured to achieve an inductive reactance necessary to cause the bandpass transmission at the lower frequency.