Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
First Claim
1. A light emitting device configured as a laser device, comprising:
- a semipolar III-nitride film including a light emitting device structure, wherein;
the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a semipolar surface of a substrate comprising a free-standing gallium nitride (GaN) substrate, the semipolar surface having a {20-21} orientation or off-cut thereof, andone or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current; and
an edge configured on the light emitting device structure for emission of electromagnetic radiation.
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Abstract
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
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Citations
31 Claims
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1. A light emitting device configured as a laser device, comprising:
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a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a semipolar surface of a substrate comprising a free-standing gallium nitride (GaN) substrate, the semipolar surface having a {20-21} orientation or off-cut thereof, and one or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current; and an edge configured on the light emitting device structure for emission of electromagnetic radiation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a laser device, comprising:
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growing a semipolar III-nitride film including a light emitting laser device structure, wherein; the light emitting laser device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a nitride substrate comprising a free-standing gallium nitride (GaN) substrate having a {20-21} surface orientation or off-cut thereof, and the semipolar III-nitride active layers have one or more material properties such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current; and forming an edge on the laser device structure for emission of electromagnetic radiation. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A light emitting device configured as a laser device, comprising:
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a semipolar III-nitride film including a light emitting device structure, wherein; the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a substrate, and one or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current; and an edge configured on the light emitting device structure for emission of electromagnetic radiation; wherein the semipolar III-nitride active layers emit light with reduced blue-shift in a blue emission peak with increasing drive current density between at least 33 Amps per centimeter square and at least 222 Amps per centimeter square, as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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29. A method for fabricating a laser device, comprising:
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growing a semipolar III-nitride film including a light emitting laser device structure, wherein; the light emitting laser device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a nitride substrate, and the semipolar III-nitride active layers have one or more material properties such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current; and forming an edge on the laser device structure for emission of electromagnetic radiation; wherein the semipolar III-nitride active layers emit light with a reduced blue-shift in a blue emission peak with increasing drive current density between at least 33 Amps per centimeter square and at least 222 Amps per centimeter square, as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges. - View Dependent Claims (30, 31)
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Specification