Display device and manufacturing method thereof
First Claim
1. A method of manufacturing a display device, comprising:
- forming a thin film transistor on a substrate including a plurality of pixel areas;
forming a pixel electrode connected to the thin film transistor in the pixel area;
forming a sacrificial layer on the pixel electrode;
forming a barrier layer on the sacrificial layer;
forming a common electrode on the barrier layer;
forming a roof layer on the common electrode;
patterning the barrier layer, the common electrode, and the roof layer to expose a portion of the sacrificial layer, thereby forming an injection hole;
removing the sacrificial layer to form a microcavity for a plurality of pixel areas;
removing the barrier layer;
injecting a liquid crystal into the microcavity through the injection hole; and
forming an encapsulation layer on the roof layer to seal the microcavity,wherein the barrier layer is made of metal or metal oxide having a different etching rate from the common electrode.
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Accused Products
Abstract
The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer.
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Citations
13 Claims
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1. A method of manufacturing a display device, comprising:
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forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to expose a portion of the sacrificial layer, thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer; injecting a liquid crystal into the microcavity through the injection hole; and forming an encapsulation layer on the roof layer to seal the microcavity,wherein the barrier layer is made of metal or metal oxide having a different etching rate from the common electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification