Exposure photolithography methods
First Claim
1. A method, comprising:
- forming a film of a photoresist composition on a substrate;
exposing a first region of the film to radiation through a first mask having a first image pattern; and
exposing a second region of the film to radiation through a second mask having a second image pattern,wherein the photoresist composition comprises;
a polymer having a structure comprising at least one acid labile group;
a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation, said photosensitive acid generator capable of generating a second amount of acid upon exposure to a second dose of radiation, said second amount of acid greater than said first amount of acid, said second dose of radiation greater than said first dose of radiation, wherein the photosensitive acid generator comprises (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof; and
a photosensitive base generator capable of generating a first amount of base upon exposure to said first dose of radiation, said photosensitive base generator capable of generating a second amount of base upon exposure to said second dose of radiation, said first amount of base greater than said first amount of acid, said second amount of base less than said second amount of acid,wherein the photosensitive base generator is selected from the group consisting of quaternary ammonium salts, and,wherein the quaternary ammonium salts have the following structure
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Abstract
A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer comprising at least one acid labile group, a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and of generating a second amount of acid upon exposure to a second dose of radiation, and a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose of radiation and of generating a second amount of base upon exposure to the second dose of radiation. The photosensitive acid generator includes (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof. The photosensitive base generator includes a quaternary ammonium salt.
37 Citations
19 Claims
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1. A method, comprising:
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forming a film of a photoresist composition on a substrate; exposing a first region of the film to radiation through a first mask having a first image pattern; and exposing a second region of the film to radiation through a second mask having a second image pattern, wherein the photoresist composition comprises; a polymer having a structure comprising at least one acid labile group; a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation, said photosensitive acid generator capable of generating a second amount of acid upon exposure to a second dose of radiation, said second amount of acid greater than said first amount of acid, said second dose of radiation greater than said first dose of radiation, wherein the photosensitive acid generator comprises (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof; and a photosensitive base generator capable of generating a first amount of base upon exposure to said first dose of radiation, said photosensitive base generator capable of generating a second amount of base upon exposure to said second dose of radiation, said first amount of base greater than said first amount of acid, said second amount of base less than said second amount of acid, wherein the photosensitive base generator is selected from the group consisting of quaternary ammonium salts, and, wherein the quaternary ammonium salts have the following structure - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method, comprising:
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forming a film of a photoresist composition on a substrate; exposing a first region of the film to a first dose of radiation through a first mask having a first image pattern; and exposing a second region of the film to a second dosed of radiation through a second mask having a second, different image pattern, wherein the photoresist composition comprises; a polymer having a structure comprising at least one acid labile group; a photosensitive acid generator capable of generating a first amount of acid upon exposure to said first dose of radiation, said photosensitive acid generator capable of generating a second amount of acid upon exposure to said second dose of radiation, said second amount of acid greater than said first amount of acid, said second dose of radiation greater than said first dose of radiation, wherein the photosensitive acid generator comprises (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof; and a photosensitive base generator capable of generating a first amount of base upon exposure to said first dose of radiation, said photosensitive base generator capable of generating a second amount of base upon exposure to said second dose of radiation, said first amount of base greater than said first amount of acid, said second amount of base less than said second amount of acid, wherein the photosensitive base generator is selected from the group consisting of quaternary ammonium salts, and, wherein the quaternary ammonium salts have the following structure - View Dependent Claims (19)
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Specification