Etching apparatus and etching method

• US 9,236,272 B2
• Filed: 09/10/2013
• Issued: 01/12/2016
• Est. Priority Date: 09/14/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Moriya, Shuji
• Primary Examiner(s): Vinh, Lan
• Application Number:
  US14/022,449
• Publication Number:
  US 20140076849A1
• Time in Patent Office: 854 Days
• Field of Search: 438/706, 438/710, 438/712, 438/714, 438/720, 438/723, 438/725, 438/736, 438/762, 216/58, 216/63, 216/64
• US Class Current: 1/1
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism.

Claims

1. An etching method, comprising:

accommodating a substrate to be processed having an etching target film into a chamber;

supplying an etching gas into the chamber to etch the etching target film; and

discharging, from the chamber, a gas produced by a reaction when the etching target film is etched, with a gas cluster generated by spraying a cluster gas into the chamber,

wherein the sprayed cluster gas undergoes adiabatic expansion and then gas clumping by van der Waals force to form the gas cluster.

2. The etching method of claim 1, wherein the etching target film is a SiN film, the etching gas is HF gas, and the gas produced by the reaction is NH₃ gas.

3. The etching method of claim 1, wherein an inert gas is used as the cluster gas.

4. The etching method of claim 3, wherein the cluster gas is Ar gas or CO₂ gas.

5. The etching method of claim 1, wherein said etching the etching target film and said discharging the gas produced by the reaction are alternately performed.

6. The etching method of claim 1, wherein said etching the etching target film and said discharging the gas produced by the reaction are simultaneously performed.

7. The etching method of claim 1, wherein the reaction occurs between the etching target film and the etching gas.

8. The etching method of claim 1, wherein the gas cluster is several to several tens of thousands of atoms and molecules of the gas clumping together by the van der Waals force.

9. The etching method of claim 1, wherein the substrate has a laminated film on its surface, a layer of the laminated film is the etching target film and the gas produced by the reaction contributes to an etching of a different layer of the laminated film.

10. The etching method of claim 9, wherein the etching target film is a SiN film, the different layer of the laminated film is a SiO₂ film, the etching gas is HF gas, and the gas produced by the reaction is NH₃ gas.

11. The etching method of claim 9, wherein the etching target film and the different layer of the laminated film have different kind of chemical compositions from each other.