Semiconductor light emitting device and method of manufacturing the same
First Claim
1. A method of manufacturing a semiconductor light emitting device, the method comprising:
- forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof;
forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core;
forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump;
polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and
forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices,wherein the reflective bump layer is formed by dotting a light reflective material on the bump core in an inkjet scheme and firing the light reflective material dotted on the bump core.
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Accused Products
Abstract
A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.
11 Citations
11 Claims
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1. A method of manufacturing a semiconductor light emitting device, the method comprising:
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forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices, wherein the reflective bump layer is formed by dotting a light reflective material on the bump core in an inkjet scheme and firing the light reflective material dotted on the bump core. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor light emitting device, the method comprising:
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forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices, wherein the bump core is formed by dotting a conductive material on the electrode pad in an inkjet scheme and firing the conductive material dotted on the electrode pad. - View Dependent Claims (9)
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10. A method of manufacturing a semiconductor light emitting device, the method comprising:
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forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices, firing the bump core formed on the electrode pad of each of the semiconductor light emitting devices prior to forming a reflective bump layer enclosing the bump core, and forming the reflective bump layer of a different material than the bump core and enclosing the bump core so as to cover all exposed surfaces of the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices. - View Dependent Claims (11)
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Specification