Light emitting device

• US 9,236,418 B2
• Filed: 01/13/2014
• Issued: 01/12/2016
• Est. Priority Date: 01/24/2002
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hiroki, Masaaki, Murakami, Masakazu, Kuwabara, Hideaki
• Primary Examiner(s): Miyoshi, Jesse Y
• Application Number:
  US14/153,362
• Publication Number:
  US 20140124771A1
• Time in Patent Office: 729 Days
• US Class Current: 1/1
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

Claims

1. A light emitting device comprising:

a first substrate;

a transistor comprising a gate electrode over the first substrate;

a first insulating layer over the transistor;

a first electrode over the first insulating layer, the first electrode being electrically connected to the transistor;

a second insulating layer over the first electrode;

a first organic compound layer over the first electrode and the second insulating layer, the first organic compound layer being electrically connected the first electrode;

a second organic compound layer over the second insulating layer;

a second electrode over the first organic compound layer and the second organic compound layer;

a third electrode comprising the same material as the gate electrode; and

a second substrate over the second electrode,

wherein the first organic compound layer partly overlaps with the second organic compound layer, and

wherein the second electrode is electrically connected to the third electrode.

2. The light emitting device according to claim 1, further comprising a silicon nitride layer over and in direct contact with the second electrode.

3. The light emitting device according to claim 1, wherein the second insulating layer comprises an organic resin.

4. The light emitting device according to claim 1, wherein the first insulating layer comprises a material selected from silicon nitride and an acrylic resin.

5. The light emitting device according to claim 1, wherein a space is provided between the first substrate and the second substrate.

6. A display module comprising the light emitting device according to claim 1 and an FPC.

7. An electronic apparatus comprising the light emitting device according to claim 1 and at least one of an antenna, a battery, and an operation switch.

8. A light emitting device comprising:

a first substrate;

a transistor comprising a gate electrode over the first substrate;

a first insulating layer over the transistor;

a first electrode over the first insulating layer, the first electrode being electrically connected to the transistor;

a second insulating layer over the first electrode;

a first organic compound layer over the first electrode and the second insulating layer, the first organic compound layer being electrically connected the first electrode;

a second organic compound layer over the second insulating layer;

a first color filter over the first organic compound layer;

a second color filter over the second organic compound layer;

a shielding section between the first color filter and the second color filter;

a second electrode over the first organic compound layer and the second organic compound layer;

a third electrode comprising the same material as the gate electrode; and

a second substrate over the second electrode,

wherein the shielding section is provided over the first electrode,

wherein the first organic compound layer partly overlaps with the second organic compound layer, and

wherein the second electrode is electrically connected to the third electrode.

9. The light emitting device according to claim 8, further comprising a silicon nitride layer over and in direct contact with the second electrode.

10. The light emitting device according to claim 8, wherein the second insulating layer comprises an organic resin.

11. The light emitting device according to claim 8, wherein the first insulating layer comprises a material selected from silicon nitride and an acrylic resin.

12. The light emitting device according to claim 8, wherein a space is provided between the first substrate and the second substrate.

13. A display module comprising the light emitting device according to claim 8 and an FPC.

14. An electronic apparatus comprising the light emitting device according to claim 8 and at least one of an antenna, a battery, and an operation switch.

15. A light emitting device comprising:

a first substrate;

a transistor comprising a gate electrode over the first substrate;

a first insulating layer over the transistor;

a first electrode over the first insulating layer, the first electrode being electrically connected to the transistor;

a second insulating layer over the first electrode;

a first organic compound layer over the first electrode and the second insulating layer, the first organic compound layer being electrically connected the first electrode;

a second organic compound layer over the second insulating layer;

a second electrode over the first organic compound layer and the second organic compound layer;

a third electrode comprising the same material as the gate electrode;

a second substrate over the second electrode; and

a sealing member between the first substrate and the second substrate;

wherein the sealing member is provided over the third electrode,

wherein the first organic compound layer partly overlaps with the second organic compound layer, and

wherein the second electrode is electrically connected to the third electrode.

16. The light emitting device according to claim 15, further comprising a silicon nitride layer over and in direct contact with the second electrode.

17. The light emitting device according to claim 15, wherein the second insulating layer comprises an organic resin.

18. The light emitting device according to claim 15, wherein the first insulating layer comprises a material selected from silicon nitride and an acrylic resin.

19. The light emitting device according to claim 15, wherein a space is provided between the first substrate and the second substrate.

20. A display module comprising the light emitting device according to claim 15 and an FPC.

21. An electronic apparatus comprising the light emitting device according to claim 15 and at least one of an antenna, a battery, and an operation switch.