Fabrication of MOS device with schottky barrier controlling layer
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- forming a gate trench in an epitaxial layer overlaying a semiconductor substrate;
depositing gate material in the gate trench;
forming a body;
forming a source;
forming an active region contact trench that extends through the source and the body into a drain;
forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench, the Schottky barrier controlling layer being formed at least in part by ion implantation; and
disposing a contact electrode within the active region contact trench;
wherein;
the Schottky barrier controlling layer controls Schottky barrier height of a Schottky diode formed by the contact electrode and the drain; and
the active region contact trench has a non-uniform depth.
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Abstract
Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into a drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench; and disposing a contact electrode within the active region contact trench. The Schottky barrier controlling layer controls Schottky barrier height of a Schottky diode formed by the contact electrode and the drain.
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Citations
9 Claims
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1. A method of fabricating a semiconductor device, comprising:
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forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into a drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench, the Schottky barrier controlling layer being formed at least in part by ion implantation; and disposing a contact electrode within the active region contact trench;
wherein;the Schottky barrier controlling layer controls Schottky barrier height of a Schottky diode formed by the contact electrode and the drain; and the active region contact trench has a non-uniform depth. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a semiconductor device, comprising:
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forming a first gate trench in an epitaxial layer overlaying a semiconductor substrate and forming a second gate trench in the epitaxial layer overlaying the semiconductor substrate; depositing gate material in the first gate trench to form a first gate and depositing gate material in the second gate trench to form a second gate; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into a drain and forming a gate contact trench within the second gate; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench, the Schottky barrier controlling layer being formed at least in part by ion implantation; and disposing a contact electrode within the active region contact trench;
wherein;the Schottky barrier controlling layer controls Schottky barrier height of a Schottky diode formed by the contact electrode and the drain; at least a portion of the active region contact trench has a different depth than the gate contact trench.
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9. A method of fabricating a semiconductor device, comprising:
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forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into a drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench, the Schottky barrier controlling layer being formed at least in part by ion implantation; and disposing a contact electrode within the active region contact trench;
wherein;the Schottky barrier controlling layer controls Schottky barrier height of a Schottky diode formed by the contact electrode and the drain; the active region contact trench is formed to have a first depth and a second depth;
the first depth is shallower than the second depth; anda first contact opening corresponding to the first depth is wider than a second contact opening corresponding to the second depth.
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Specification