Miscut bulk substrates
First Claim
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1. A device comprising;
- a bulk (Al,Ga,In)N substrate;
a plurality of epitaxial layers overlying the bulk (Al,Ga,In)N substrate and defining a light-emitting device structure,wherein a top surface of the device structure is characterized by a nominal c-plane crystallographic orientation miscut by an angle from 0.35 degrees to 1 degrees toward an m-direction; and
wherein the epitaxial layers of the light-emitting device structure are configured to have a standard deviation of photoluminescent wavelength uniformity of less than 1% over at least a 2,500 μ
m2 area.
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Abstract
A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.
144 Citations
18 Claims
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1. A device comprising;
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a bulk (Al,Ga,In)N substrate; a plurality of epitaxial layers overlying the bulk (Al,Ga,In)N substrate and defining a light-emitting device structure, wherein a top surface of the device structure is characterized by a nominal c-plane crystallographic orientation miscut by an angle from 0.35 degrees to 1 degrees toward an m-direction; and wherein the epitaxial layers of the light-emitting device structure are configured to have a standard deviation of photoluminescent wavelength uniformity of less than 1% over at least a 2,500 μ
m2 area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification