Light emitting diode and method for manufacturing same

• US 9,236,533 B2
• Filed: 12/21/2012
• Issued: 01/12/2016
• Est. Priority Date: 12/23/2011
• Status: Expired due to Fees

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Im, Tae Hyuk, Kim, Chang Yeon, Yoon, Yeo Jin, Lee, Joon Hee, Nam, Ki Bum, Kim, Da Hye, Im, Chang Ik, Kim, Young Wug
• Primary Examiner(s): ULLAH, ELIAS
• Application Number:
  US14/368,268
• Publication Number:
  US 20140367722A1
• Time in Patent Office: 1,117 Days
• Field of Search: 257/82
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Claims

1. A light-emitting diode, comprising:

a first conductivity-type clad layer;

a light scattering pattern disposed in the first conductivity-type clad layer and having a different index of refraction than the first conductivity-type clad layer;

a second conductivity-type clad layer disposed on a first side of the first conductivity-type clad layer;

an active layer disposed between the first conductivity-type clad layer and the second conductivity-type clad layer;

a first electrode disposed on a second side of the first conductivity-type clad layer opposite to the first side, the first electrode electrically connected to the first conductivity-type clad layer; and

a second electrode electrically connected to the second conductivity-type clad layer,

wherein;

the first electrode comprises a bonding pad and an extension; and

the light scattering pattern is disposed under the bonding pad and not disposed under the extension.

2. The light emitting diode of claim 1, wherein the light scattering pattern overlaps the first electrode.

3. The light emitting diode of claim 2, wherein the light scattering pattern is disposed in a first region overlapping the first electrode and in a second region adjacent to the first region.

4. The light emitting diode of claim 1, wherein openings defined by the light scattering pattern have a smaller width in a first region overlapping the first electrode than in a second region not overlapping the first electrode.

5. The light emitting diode of claim 1, wherein the light scattering pattern comprises dots, lines, or through-holes.

6. The light emitting diode of claim 1, wherein the light scattering pattern comprises an insulation layer having a lower index of refraction than the first conductivity-type clad layer.

7. A light-emitting diode, comprising:

a first conductivity-type clad layer;

a light scattering pattern disposed in the first conductivity-type clad layer and having a different index of refraction than the first conductivity-type clad layer;

a second conductivity-type clad layer disposed on a first side of the first conductivity-type clad layer;

an active layer disposed between the first conductivity-type clad layer and the second conductivity-type clad layer;

a first electrode disposed on a second side of the first conductivity-type clad layer opposite to the first side, the first electrode electrically connected to the first conductivity-type clad layer; and

a second electrode electrically connected to the second conductivity-type clad layer,

wherein;

the light scattering pattern comprises alternating layers having different indices of refraction; and

the alternating layers are stacked one above another.