Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices

• US 9,239,427 B1
• Filed: 07/14/2014
• Issued: 01/19/2016
• Est. Priority Date: 07/14/2008
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: Raring, James W.
• Primary Examiner(s): KIM, ELLEN E
• Application Number:
  US14/330,956
• Time in Patent Office: 554 Days
• Field of Search: 385/14, 438/31
• US Class Current: 1/1
• CPC Class Codes: G02B 2006/12085 Integrated
• CPC Class Codes: G02B 2006/12121 Laser
• CPC Class Codes: G02B 6/126 using polarisation effects G02B6/1226 takes precedence
• CPC Class Codes: H01S 3/081 comprising three or more reflectors
• CPC Class Codes: H01S 5/005 Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/0268 Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
• CPC Class Codes: H01S 5/0625 in multi-section lasers
• CPC Class Codes: H01S 5/1003 Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
• CPC Class Codes: H01S 5/125 Distributed Bragg reflector [DBR] lasers
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/32025 non-polar orientation
• CPC Class Codes: H01S 5/320275 semi-polar orientation
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.

Claims

1. A method of manufacturing a monolithically integrated optical device, the method comprising:

providing a gallium and nitrogen containing substrate member having a surface region, the surface region being configured on either a non-polar surface orientation or a semi-polar surface orientation;

forming a first waveguide structure configured in a first direction overlying a first portion of the surface region, the first waveguide structure configured in the first direction being characterized by a first gain and loss; and

forming a second waveguide structure configured in a second direction overlying a second portion of the surface region, the second waveguide structure configured in the second direction being characterized by a second gain and loss,

wherein the first direction is different from the second direction.

2. The method of claim 1, wherein the surface orientation is the nonpolar m-plane;

and wherein the second waveguide structure is integrally configured with the first waveguide structure to form a continuous waveguide structure or wherein the surface orientation is semi-polar and is a plane selected from a (20-21) plane, a (30-31) plane, a (20-2-1) plane, a (30-3-1) plane, and a (11-22) plane, or within +/−

5 degrees toward a c-direction and/or toward an a-direction from the plane; and

wherein the second waveguide structure is integrally configured with the first waveguide structure to form a continuous waveguide structure.

3. The method of claim 1, wherein the first direction is in a c-direction or a projection of a c-direction.

4. The method of claim 1, wherein the second direction is in an a-direction or m-direction.

5. The method of claim 1, wherein the first gain is greater than the second gain.

6. The method of claim 1, wherein the second gain is greater than the first gain.

7. The method of claim 1, wherein the first waveguide structure is configured to generate guided light with a first peak emission wavelength, the second waveguide structure is configured to generate guided light with a second peak emission wavelength, and the first peak emission wavelength is greater than the second peak emission wavelength.

8. The method of claim 1, wherein the first waveguide structure is configured to generate a first guided emission primarily in a first polarization state;

and the second waveguide structure is configured to generate a second guided emission primarily in a second polarization state.

9. The method of claim 1, further comprising a passive device operably coupled to the first waveguide structure and to the second waveguide structure.

10. The method of claim 1, wherein the surface orientation is the non-polar configuration, and the first waveguide structure is characterized by a maximum gain along a c-direction and laser light being polarized perpendicular to the c-direction.

11. The method of claim 1, wherein the surface orientation is in a semi-polar configuration and is a plane selected from a (20-21) plane, a (30-31) plane, a (20-2-1) plane, a (30-3-1) plane, and a (11-22) plane, or within +/−

5 degrees toward a c-direction and/or toward an a-direction from the selected plane;

wherein the first waveguide structure is characterized by a maximum gain along a projection of a c-direction and laser light being polarized perpendicular to the projection of the c-direction.

12. The method of claim 1, wherein the first waveguide structure is overlying a plurality of first strained quantum well regions;

and the second waveguide structure is overlying a plurality of second strained quantum well regions; and

the optical device further comprises a power supply operably coupled to at least one of the first waveguide structure or to the second waveguide structure to configure an optical length of a laser cavity associated with either the first waveguide structure or the second waveguide structure.

13. The method of claim 1, further comprising total internal reflector mirrors configured to integrally couple the first waveguide structure and the second waveguide structure;

and wherein reactive ion etching (RIE), inductively coupled plasma (ICP) etching, or chemically assisted electron beam etching (CAIBE) is used to form the total internal reflector mirrors.

14. The method of claim 1, wherein the first waveguide structure and the second waveguide structure form a laser cavity, and comprising lithographically defined mirrors at two ends of the laser cavity;

and wherein the lithographically defined mirrors are etched facet mirrors and are formed with reactive ion etching (RIE), inductively coupled plasma (ICP) etching, or chemically assisted electron beam etching (CAIBE).

15. The method of claim 1, further comprising a mirror surface coupled to each end of the first waveguide structure and to each end of the second waveguide structure.

16. The method of claim 1, wherein a lithographically defined mirror is defined in a first waveguide section and/or in a second waveguide section and/or in between a first waveguide section and a second waveguide section;

and wherein the second waveguide section is electrically coupled to a power source and functions to modulate or absorb light propagating in the second waveguide section.

17. The method of claim 1, wherein the second waveguide structure is configured to increase or to decrease an optical length of a continuous waveguide structure comprising one or more first waveguide sections and one or more second waveguide sections by electrically coupling a power supply to the second waveguide section;

and wherein the second waveguide section functions to tune the peak wavelength of the emitted light from the optical device.

18. The method of claim 1, wherein the first waveguide structure is operable in a passive mode;

and wherein the second waveguide structure is operable in an active mode.

19. The method of claim 1, wherein the second waveguide structure is operable as a switching device, the switching device configured to allow emission of electromagnetic radiation derived from the first waveguide structure or to stop emission of the electromagnetic radiation derived from the first waveguide structure.

20. The method of claim 1, wherein the first waveguide structure is coupled to the second waveguide structure by at least one total internal reflecting turning mirror.

21. The method of claim 1, wherein the first waveguide structure is a first waveguide section and the second waveguide structure is a second waveguide section, the first waveguide structure and the second waveguide structure are included in a plurality of waveguide structures, numbered from 3 to N, wherein N is an integer greater than 3.

22. The method of claim 1, wherein the first waveguide structure comprises a plurality of first waveguide sections;

and the second waveguide structure comprises a plurality of waveguide sections; and

wherein the plurality of first waveguide structures are coupled to the plurality of second waveguide structures by a plurality of respective total internal reflecting turning mirrors.

23. A monolithically integrated optical device comprising:

a gallium and nitrogen containing substrate member having a surface region, the surface region configured on either a non-polar orientation or a semi-polar orientation;

a first waveguide structure configured in a first direction overlying a first portion of the surface region, the first waveguide structure configured in the first direction being characterized by a first gain and loss;

a second waveguide structure coupled to the first waveguide structure, the second waveguide structure configured in a second direction overlying a second portion of the surface region, the second waveguide structure configured in the second direction being characterized by a second gain and loss; and

wherein the first gain is greater than the second gain or the second gain is greater than the first gain.

24. The optical device of claim 23, wherein the surface orientation is a nonpolar m-plane;

and wherein the second waveguide structure is integrally configured with the first waveguide structure to form a continuous waveguide structure or wherein the surface orientation is semipolar and is a plane selected from a (20-21) plane, a (30-31) plane, a (20-2-1) plane, a (30-3-1) plane, and a (11-22) plane, or within +/−

5 degrees toward a c-direction and/or toward an a-direction from thee planes; and

wherein the second waveguide structure is integrally configured with the first waveguide structure to form a continuous waveguide structure.

25. The optical device of claim 23, wherein a lithographically defined mirror is defined in a first waveguide section and/or in a second waveguide section and/or in between a first waveguide section and a second waveguide section;

and wherein the second waveguide section is electrically coupled to a power source and functions to modulate or absorb light propagating in the second waveguide section.

26. A monolithically integrated optical device comprising:

a gallium and nitrogen containing substrate member having a surface region, the surface region configured on either a non-polar orientation or a semi-polar orientation;

a first waveguide structure configured in a first direction overlying a first portion of the surface region, the first waveguide structure configured in the first direction being characterized by a first gain and loss;

a second waveguide structure coupled to the first waveguide structure, the second waveguide structure configured in a second direction overlying a second portion of the surface region, the second waveguide structure configured in the second direction being characterized by a second gain and loss; and

wherein the first loss is greater than the second loss or the second loss is greater than the first loss.