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Semiconductor device and method for manufacturing the same

  • US 9,240,488 B2
  • Filed: 12/15/2010
  • Issued: 01/19/2016
  • Est. Priority Date: 12/18/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer including a channel formation region, a first region, and a second region over a substrate;

    a gate insulating layer over the oxide semiconductor layer;

    a gate electrode layer over the gate insulating layer;

    an insulating layer over the gate electrode layer and the gate insulating layer; and

    a source electrode layer and a drain electrode layer over the insulating layer,wherein the first region is one of a source or drain region,wherein each of the first region and the second region includes oxygen defects due to oxygen-defect-inducing factors,wherein the second region is between the channel formation region and the first region,wherein a concentration of the oxygen-defect-inducing factors of the second region is lower than that of the first region,wherein the insulating layer includes a first part overlapping with the first region and a second part overlapping with the second region,wherein an interface between the first part and the second part is substantially aligned with an interface between the first region and the second region, andwherein the gate insulating film is over and in contact with the first region and the second region.

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